In booth 156 at European Microwave Week (EuMW 2016) in London, UK (3–7 October), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility ...
Tags: Wolfspeed, GaN-on-SiC, HEMTs, EuMW 2016
Anokiwave Inc of San Diego, CA, USA, a provider of highly integrated silicon core chips and III-V front-end integrated circuits for emerging millimeter-wave (mmW) and active electronically scanned array (AESA) markets, has announced the ...
Cree Inc of Durham, NC, USA has introduced what it claims are the industry’s highest-power continuous wave (CW) RF gallium nitride (GaN) high-electron-mobility transistors (HEMTs) packaged in a dual-flat no-leads (DFN) format. ...
Tags: GaN Transistors, CREE
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has launched two high-power monolithic microwave integrated circuit ...
Tags: M/A-COM X-band radar, Electrical, Electronics, Amplifiers
M/A-COM Technology Solutions Inc of Lowell, MA, USA, which makes semiconductors, components and subassemblies for RF, microwave and millimeter-wave applications, has launched what it claims is the industry’s first integrated core chip ...
Tags: M/A-COM, Commercial Radar
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for RF, microwave and millimeter-wave applications) has launched a single-pole, double-throw (SPDT) switch-limiter suitable ...
Tags: M/A-COM, Electrical, Electronics
Cambridge Pixel aims to simplify and speed up the development of complex radar display system design. The company has developed a software simulator for testing primary radar display applications earlier in the design cycle and before ...
Tags: Cambridge Pixel, radar display system design, software simulator, NASA
Cree Inc of Durham,NC,USA has announced the sample release of a high-efficiency unmatched gallium nitride(GaN)high-electron-mobility transistor(HEMT)for military and commercial S-band radar applications. Rated at 60W for frequencies of ...
Tags: GaN, HEMT, High-Efficiency, Radar
4 June 2012 Cree launches X-band fully matched 50-100W GaN HEMTs for commercial radar and satcoms Cree Inc of Durham,NC,USA has launched high-efficiency X-band,fully matched gallium nitride(GaN)high-electron-mobility transistors(HEMTs)for ...
Tags: Cree Inc, GaN HEMTs, high-efficiency X-band, semiconductor, IEEE