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Cubic Silicon Carbide
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Germany Developed GaN HEMTs on Sic Layers on Silicon Wafers
Jan 5, 2015Researchers in Germany have developed gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on silicon carbide (SiC) layers on silicon wafers [Wael Jatal et al, IEEE Electron Device Letters, published online 11 December 2014]. ...
Tags: Cubic Silicon Carbide, Electrical
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Cubic Silicon Carbide Is Considered to Be Suitable for Making Highly Efficient Solar Cells
Jun 20, 201220 June 2012 Cubic silicon carbide grown with quality similar to hexagonal SiC Cubic silicon carbide(3C-SiC)is considered to be very suitable for making highly efficient solar cells but the material quality has been poor compared with the ...
Tags: hexagonal SiC, Solar cells, Cubic silicon carbide, highly efficiency
