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GaN FETs
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TI Expands GaN Power Portfolio with Smallest and Fastest GaN FET Drivers
Mar 7, 2018Expanding on its gallium nitride (GaN) power portfolio, Texas Instruments Inc (TI) has launched two high-speed GaN field-effect transistor (FET) drivers to create more efficient, higher-performing designs in speed-critical applications such ...
Tags: GaN Power, GaN FET Drivers
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Peregrine's New PE29102 FET Driver Brings Fastest Switching Speeds to GaN Class-D Audio
Oct 18, 2017Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched the UltraCMOS PE29102 high-speed FET driver. With a ...
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Telcodium Partners with Transphorm on First Redundant Power Supplies Using GaN Fets
Sep 20, 2016Power supply design firm Telcodium of Boucherville, QC, Canada, in collaboration with Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC-qualified 650V gallium nitride (GaN)-based devices for ...
Tags: Telcodium, Transphorm, GaN FETs
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Navitas Launches First GaN Power ICs
Mar 21, 2016Navitas Semiconductor Inc of El Segundo, CA, USA has launched its first products, which are claimed to be the industry's first gallium nitride (GaN) power ICs. Navitas was founded in 2013, and in 2014 investment firm MalibuIQ licensed the ...
Tags: GaN, Power electronics
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EPC To Show Applications Using EGAN Technology At APEC
Mar 9, 2016In booth #2244 at the 31st IEEE Applied Power Electronics Conference and Exposition (APEC 2016) in Long Beach (20-24 March), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on ...
Tags: GaN FETs, DC-DC Converter
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GaN Systems Announces 10x Production Increase at TSMC
Dec 2, 2015GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, says that Taiwan Semiconductor Manufacturing Corporation (TMSC, the ...
Tags: GaN Systems, E-mode GaN FETs, TSMC
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GaN Systems' Launches Half-Bridge Evaluation Board for GaN Transistor Circuit Design
Nov 9, 2015GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has launched its Half-Bridge Evaluation Board, which demonstrates ...
Tags: GaN Transistor Circuit, power switching semiconductors
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Ti Introduced The First 80v, 10a Integrated GaN Fet Power-Stage Prototype
Mar 16, 2015Texas Instruments Inc (TI) has introduced what it claims is the first 80V, 10A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage prototype, consisting of a high-frequency driver and two GaN FETs in a half-bridge ...
Tags: GaN FETs, transistor
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EPC to Launch a Free One-Hour Webinar
Aug 25, 2014Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, says that, on 3 September (at 11am-12pm ...
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GOMACTech 2014 Will Present Results of a Newly Released Family of eGaN HEMTs
Mar 31, 2014At the 39th annual Government Microcircuit Applications and Critical Technology (GOMACTech 2014) conference in Charleston, SC, USA (3 April), Alex Lidow, CEO & co-founder of Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, ...
Tags: DC-DC Converter, EPC
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APEC 2014 Will Give Three Application-Focused Technical Presentations
Mar 5, 2014At 29th annual IEEE Applied Power Electronics Conference & Exposition (APEC 2014) in Fort Worth, TX, USA (16-20 March), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon ...
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EPC Extended Its Range of High-Speed, High-Performance Transistors
Sep 27, 2013Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has extended its range of high-speed, ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
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ISSCC Is The World Showcase for Innovative Circuit Design
Feb 21, 2013ISSCC 2013 - 60th Anniversary Held every year in February in San Francisco, the IEEE's International Solid State Circuits Conference (ISSCC) is the world showcase for innovative circuit design. This is the 60th conference, and year's ...
Tags: Circuits Conference, capacitors, inductors
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EPC Has Made Available The EPC9004 Development Board
Feb 6, 2013Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has made available the EPC9004 development board, featuring the firm’s enhancement-mode gallium nitride on silicon (eGaN) field-effect transistors (FETs) for power ...
Tags: EPC, Power Systems, eGaN FETs
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Amcad Engineering Announced an Upgrade to PIV Pulse Current-Voltage Semiconductors
Oct 26, 2012AMCAD Engineering of Limoges,France(which provides test and modelling tools for RF and microwave IC applications)has announced an upgrade to its PIV pulse current-voltage semiconductor device analyzer family for the next generation of ...
Tags: AMCAD, HVFS, transistor, GaN