GaN Technology articles & resources on Made-in-China.com

US Air Force's GaN Technology to Be Transferred to Bae Systems Advanced Microwave Products Center

Sep 21, 2018

BAE Systems has signed a cooperative agreement with the US Air Force Research Laboratory (AFRL) for Phase 1 of a technical effort to transition gallium nitride (GaN) semiconductor technology developed by the US Air Force to its Advanced ...

Tags: Microwave Products, GaN Technology

TI Expands GaN Power Portfolio with Smallest and Fastest GaN FET Drivers

Mar 7, 2018

Expanding on its gallium nitride (GaN) power portfolio, Texas Instruments Inc (TI) has launched two high-speed GaN field-effect transistor (FET) drivers to create more efficient, higher-performing designs in speed-critical applications such ...

Tags: GaN Power, GaN FET Drivers

Advantech Wireless Presenting Second-Generation GaN SSPAs at Africacom and Global Milsatcom

Nov 9, 2017

Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave broadband communications systems) is presenting details of its second-generation gallium nitride (GaN)-based solid-state power amplifiers ...

Tags: Advantech Wireless, GaN technology

GaN Systems Launches Evaluation Board Combining GaN Power Transistors with Peregrine's E-Hemt Drivers

Oct 20, 2017

GaN Systems Inc of Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications – has made available the GS61004B-EVBDC evaluation ...

Tags: GaN Systems, integrated circuits

Peregrine's New PE29102 FET Driver Brings Fastest Switching Speeds to GaN Class-D Audio

Oct 18, 2017

Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched the UltraCMOS PE29102 high-speed FET driver. With a ...

Tags: Peregrine Semiconductor, Semiconductor

GaN Systems and Taiwan's Ministry of Economic Affairs Collaborate on GaN Technology to Meet Global Power Challenges

Oct 10, 2017

GaN Systems Inc of Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control – and Taiwan’s Ministry of Economic Affairs (MOEA) have ...

Tags: GaN Systems, Power Challenges

NRL Demonstrates Growth of Thin-Film Niobium Nitride

Jul 7, 2017

The US Naval Research Laboratory (NRL) has demonstrated the ability to grow thin films of the transition-metal nitride Nb2N (niobium nitride). The thin crystalline material has a similar structure to gallium nitride (GaN), but its ...

Tags: Thin-Film Niobium Nitride, LED

Picosun Collaborating with Taiwan's NCTU and Atom Semicon on ALD

Jul 7, 2017

Atomic layer deposition (ALD) thin-film technology firm Picosun Oy of Espoo, Finland, Taiwan’s National Chiao Tung University (NCTU) and Atom Semicon Co Ltd of New Taipei City, Taiwan have begun a joint collaboration on the ...

Tags: GaN devices, Electro-Optical Engineering

Navitas Partners with Asian Distributors to Accelerate GaN Power IC Adoption

Jun 29, 2017

Navitas Semiconductor Inc of El Segundo, CA, USA has expanded its support in Asia by entering two new distribution partnerships for its gallium nitride (GaN) power ICs. By partnering with Myland Technologies Inc and Allied Group (HK) Ltd, ...

Tags: GaN Power, IC Adoption

Advantech Wireless Launches Second-Generation GaN-Based 100/125W KA-Band Bucs

May 26, 2017

In booth 1H2-01 at the CommunicAsia 2017 event in Singapore (23-25 May), Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave broadband communications systems) has launched the SSPB-3010Ka ...

Tags: Advantech Wireless, upconverter

Custom Mmic Boots Passive Mixer Linearity by Using Gan Rather Than GaAs

Apr 27, 2017

Monolithic microwave integrated circuit developer Custom MMIC of Westford, MA, USA has announced a new technical brief detailing its progress in boosting linearity by using passive MMIC mixers based on gallium nitride (GaN) technology. ...

Tags: Custom MMIC, MMIC mixers

EPC Issues Ninth Reliability Report

Apr 14, 2017

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced its Phase Nine Reliability ...

Tags: gallium nitride, FETs

LED Technology Breakthroughs in 2016

Dec 31, 2016

As 2016 comes to an end, there were many exciting and surprising technology breakthroughs, based on statistics complied by LEDinside there were at least 10 major technology advancements this year. American researchers make droop free LEDs ...

Tags: LED, UV LED

Qorvo Launches Compact GaN L- and S-Band Power Amplifiers for Advanced Radar Systems

Oct 12, 2016

Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched two new power amplifiers (PAs) including what is claimed to be the first ...

Tags: Qorvo, PAs, GaN technology

Raytheon Wins MDA Contract Modification to Transition AN/TPY-2 Radar Production From GaAs to GaN

Oct 12, 2016

The US Missile Defense Agency has awarded Raytheon Company of Waltham, MA, USA a contract modification to develop a transition to production process to incorporate gallium nitride (GaN) components into existing and future AN/TPY-2 radars. ...

Tags: Raytheon, MDA, contract

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