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InGaAs MOSFETs QW MOSFETs InGaAs ALD
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South Korea Developed a Gate Stack for III-V Quantum Well QW MOSFETs
May 9, 2014Researchers based in USA and South Korea have developed a gate stack for III-V quantum well metal-oxide-semiconductor field-effect transistors (QW MOSFETs) based on a bilayer dielectric of beryllium oxide (BeO) and hafnium dioxide (HfO2) ...
Tags: InGaAs MOSFETs QW MOSFETs InGaAs ALD, Electrical, Electronics