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InGaN LEDs
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Osram Boosts Efficiency of Green LEDs by 40%
May 18, 2018Osram Opto Semiconductors GmbH of Regensburg, Germany has succeeded in reducing the typical forward voltage by about 600mV to 2.6V (at a power density of 45A/cm2) in its indium gallium nitride (InGaN)-based green direct-emitting LEDs. With ...
Tags: Osram, Green LEDs
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LED Makers Saw Increasing Capacity Utilization
May 5, 2016Demand of LED has resumed in the second quarter. Leading Taiwanese LED chip maker Epistar reached full production capacity in AlGaInP LEDs. Meanwhile, Unity Opto is expected to see two-digit growth in the second quarter as its order ...
Tags: LED industry, LED chip
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Silicon Dioxide Charge Inverter Boosts Hole Injection in IngaN LEDs
Apr 21, 2016Researchers based in China, Singapore and Turkey have used an extremely thin layer of silicon dioxide (SiO2) insulator as a charge inverter in indium gallium nitride (InGaN) light-emitting diodes (LEDs), improving light output power and ...
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Hole Injection From V-Pits Into Indium Gallium Nitride Quantum Wells
Nov 18, 2015Researchers at Nanchang University in China have been studying the effect of V-pits in indium gallium nitride (InGaN) light-emitting diodes (LEDs) on electroluminescence [Xiaoming Wu, Junlin Liu, and Fengyi Jiang, J. Appl. Phys., vol118, ...
Tags: InGaN quantum wells, InGaN LEDs, InGaN
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Spin-Coating of Silver Nanowires as Transparent Electrode for InGaN LEDs
Feb 10, 2015Researchers in Korea have used spin-coated silver nanowires (Ag NWs) to improve the performance of indium gallium nitride light-emitting diodes (InGaN LEDs) [Gyu-Jae Jeong et al, Appl. Phys. Lett., vol106, p031118, 2015]. The team based at ...
Tags: Spin-Coating, InGaN LEDs
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Epistar and Tsmc Approved a Sale of Tsmc Solid State Lighting Shares
Jan 13, 2015Epistar Corp. and Taiwan Semiconductor Manufacturing Co. (TSMC ) held Board of Directors’ meetings today and approved a sale of TSMC Solid State Lighting (TSMC SSL) shares. Epistar will acquire all shares of TSMC SSL held by TSMC and ...
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A 42% Enhancement in Light Output From Flip-Chip Ingan LEDs
Jan 8, 2015Researchers at Chinese Academy of Sciences’ Institute of Semiconductors have achieved a 42% enhancement in light output from flip-chip indium gallium nitride (InGaN) light-emitting diodes (LEDs) by incorporating a photonic crystal ...
Tags: photonic crystal(PHC)structure, light-emitting diodes, Electrical
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The Light Output Power for The Sc-Qb LED Was 47% Higher Than for a Thin QB Device
Nov 19, 2014Researchers based in China have found “remarkably reduced efficiency droop” from staircase (SC) thin indium gallium nitride (InGaN) quantum barrier (QB) light-emitting diodes (LEDs) [Kun Zhou et al, Appl. Phys. Lett., vol105, ...
Tags: High Current, remarkably reduced efficiency droop, Electrical
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Green All-Ingan LEDs Close 'green Gap'
Nov 10, 2014Funded by Germany’s Federal Ministry of Education and Research (BMBF) and coordinated by Osram Opto Semiconductors GmbH of Regensburg, Germany, the Hi-Q-LED project has made advances with green LEDs, diminishing the ‘green ...
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Grading Ingan Wells to Increase LED Light Output Power
Aug 16, 2014Singapore's Nanyang Technological University and Turkey's Bilkent University have developed a graded multiple quantum well (MQW) structure with the aim of increasing light output power and reducing efficiency droop in 450nm indium gallium ...
Tags: LED, LED Light, Electrical, Electronics
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Increasing Light Output From Ingan LEDs
Aug 12, 2014China's Nanjing University of Posts and Telecommunications has improved the performance of indium gallium nitride (InGaN) light-emitting diodes (LEDs) on silicon (Si) substrate by removing the substrate from the region under the device ...
Tags: Silicon wafer, Electrical, Electronics
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Sun Yat-sen University in China has improved the wall-plug efficiency
Mar 31, 2014Sun Yat-sen University in China has improved the wall-plug efficiency of indium gallium nitride (InGaN) light-emitting diodes (LEDs) grown on silicon by incorporating a distributed Bragg reflector (DBR) [Yibin Yang et al, Appl. Phys. ...
Tags: InGaN LEDs, Silicon, semiconductor
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While Gpi and Forepi Remain Conservative,Epistar Continues Mocvd Expansion
Jan 7, 2014Chinese LED chip manufacturers are conservative towards expansion, according to the Commercial Times. Forepi and Genesis Photonics Inc. (GPI) have temporarily stopped introducing new MOCVD units for 2014 and are aiming to increase ...
Tags: LED chip
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A Monolithic MOVPE Process for Growing InGaN LEDs Has Been Developed
Sep 20, 2013Researchers in France have developed a monolithic metal-organic vapor phase epitaxy (MOVPE) process for growing indium gallium nitride (InGaN) light-emitting diodes (LEDs) with a multiple quantum well (MQW) light converter [Benjamin ...
Tags: Electrical, Electronics
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Jimei University Used InGaN P-Type Contacts to Increase Light Output Power by 45%
Sep 16, 2013Jimei University in China has used indium gallium nitride (InGaN) p-type contacts to increase light output power by 45% over a reference device [Wang Min-Shuai and Huang Xiao-Jing, Chin. Phys. B, vol. 22, p086803, 2013]. The researchers ...
Tags: InGaN LEDs MOCVD, LED, Electrical, Electronics
