- Location
1
result for "
Indium Surfactant
"-
UCSB in The USA Has Improved Hole Concentrations in p-GaN
Jun 19, 2015University of California Santa Barbara (UCSB) in the USA has improved hole concentrations in p-type gallium nitride (p-GaN) by using indium as a surfactant in ammonia-based molecular beam epitaxy (NH3MBE) [Erin C. H. Kyle et al, Appl. Phys. ...
Tags: Gallium Nitride, Indium Surfactant