Laser bars articles & resources on Made-in-China.com

II-VI Inc Launches 200W Actively Cooled Laser Bars and Multi-Kilowatt Stacks for New Directed-Energy Weapons

Sep 22, 2017

Engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA (which makes high-power semiconductor laser components) has announced the commercial availability of its actively cooled laser bars, emitting 200W of ...

Tags: Engineered materials, semiconductor

FBH Showcasing Diode Laser and UV LED Developments

Jun 21, 2017

In hall B2, booth 350 at the Laser World of Photonics 2017 trade show in Munich, Germany (26–29 June), Berlin-based Ferdinand-Braun-Institut, Leibniz-Institut für Hochstfrequenztechnik (FBH) – which offers the full value ...

Tags: FBH, UV LED Developments

Indium Gallium Arsenide Laser Diode on Exact Germanium-on-Silicon Substrate

Sep 9, 2016

Researchers in Russia have developed an indium gallium arsenide (InGaAs) quantum well laser diode on (001) germanium-on-silicon 'virtual substrate' without offcut angle [V. Ya. Aleshkin et al, Appl. Phys. Lett., vol109, p061111, 2016]. ...

Tags: InGaAs, Laser diodes, III-Vs-on-Si

Epitaxial Growth of Laser Diodes on Wafer-Bonded InP/Si Substrates

Jun 12, 2016

Sophia University in Japan has developed a technique for growing laser diodes on an indium phosphide (InP) layer bonded to silicon (Si) [Keiichi Matsumoto et al, Appl. Phys. Express, vol9, p062701, 2016]. The researchers claim that this is ...

Tags: Laser Diodes, Si Substrates

Direct Growth Of III-V Quantum Dot Lasers On Silicon Substrate

Mar 15, 2016

Researchers in the UK have claimed the first demonstration of laser diodes grown directly on silicon that perform up to 75°C and 120°C under continuous wave (cw) and pulsed operation, respectively [Siming Chen et al, Nature ...

Tags: Quantum dot lasers, GaAs, Silicon substrate, MBE

University of Oklahoma Has Developed IC Lasers on InAs Substrates

Jul 17, 2015

University of Oklahoma in the USA has developed interband cascade (IC) lasers on indium arsenide (InAs) substrates with low threshold and high-current operation [Lu Li et al, Appl. Phys. Lett., vol106, p251102, 2015]. The researchers claim ...

Tags: electronic components, semiconductor

University of Oklahoma Develops IC Lasers on InAs Substrates with Low Threshold

Jul 17, 2015

University of Oklahoma in the USA has developed interband cascade (IC) lasers on indium arsenide (InAs) substrates with low threshold and high-current operation [Lu Li et al, Appl. Phys. Lett., vol106, p251102, 2015]. The researchers claim ...

Tags: electronic components, semiconductor

A Single 1cm Laser Bar Can Deliver at Least 2kw of Optical Output Power

Jun 2, 2015

In a talk and a tutorial at CLEO 2015 (Conference on Lasers and Electro-Optics) in San Jose, CA, USA (10-15 May), a team led by Paul Crump from FBH (Ferdinand-Braun-Institut, Leibniz-Institut fur Hoechstfrequenztechnik) of Berlin, Germany ...

Tags: Diode lasers, FBH

Dilas of Mainz Has Delivered Its T-Bar Fiber-Laser Pump Module

May 14, 2015

Diode laser maker DILAS of Mainz, Germany has delivered its 20,000th high-power, high-brightness tailored bar-based (T-Bar) fiber-laser pump module. Shipping its first unit in 2009, the milestone product was designed and developed as a ...

Tags: DILAS Diode laser, Fiber-Laser Pump

Long-Wavelength Interband Cascade Lasers

Feb 27, 2015

Researchers from Germany and the UK claim record long wavelengths of 7μmfor interband cascade lasers (ICLs) based on indium arsenide (InAs) heterostructures [Matthias Dallner et al, Appl. Phys. Lett., vol106, p041108, 2015]. Devices with ...

Tags: Interband Cascade Lasers, Electronics

Researchers Develops a Monolithic Room-Temperature THz Source Based on QCLs

Dec 12, 2014

Northwestern University’s Center for Quantum Devices in USA has developed a monolithic room-temperature terahertz (THz) source based on quantum cascade lasers (QCLs) [Q. Y. Lu et al, Appl. Phys. Lett., vol105, p201102, 2014]. The ...

Tags: tunable THz source, THz spectroscopy, Electrical

Dilas of Mainz Has Launched a Higher-Power Fiber-Coupled Diode Laser System

Sep 6, 2014

Diode laser maker DILAS of Mainz, Germany has launched a higher-power fiber-coupled diode laser system for materials processing applications with output power of 2.5kW at 980nm. The SF2500/10 fiber-coupled system is based on ...

Tags: DILAS Diode laser, Electrical, Electronics

OSRAM Opto Semiconductors GmbH of Regensburg Is The World's Second Largest Manufacturer

Feb 23, 2013

OSRAM Opto Semiconductors GmbH of Regensburg, Germany, a wholly owned subsidiary of Osram GmbH, is the world's second largest manufacturer of optoelectronic semiconductors after LiteOn and followed third place by Cree Inc. One of the main ...

Tags: Osram Opto Semiconductors GmbH, led, Light-emitting diode manufacturers

Osram Is Being Supported by The German Federal Ministry for Education and Research

Feb 22, 2013

To help improve the performance of laser systems while reducing production costs, Osram Opto Semiconductors GmbH of Regensburg, Germany is coordinating the project IMOTHEB (Integrated microoptical and microthermal elements for diode lasers ...

Tags: IR Laser Sources, Osram, Lighting

Osram Is Coordinating a BMBF Project for Developing High-Brilliance Infrared Laser Sources

Feb 22, 2013

The aim is to increase the performance and lower the costs of laser systems for material processing As part of the ‘Integrated Microphotonics’ initiative, Osram Opto Semiconductors is coordinating the IMOTHEB project ...

Tags: BMBF project, Semiconductors

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