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MIS HFET
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Latest Issue of Semiconductor Today Now Available
Jul 31, 2012Latest issue of Semiconductor Today now available For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month,subscribe to Semiconductor ...
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11 May 2012 Record Transconductance of 1105mS/Mm for GaN/InAIN MIS-HFET
May 11, 201211 May 2012 Record transconductance of 1105mS/mm for GaN/InAlN MIS-HFET University of California Santa Barbara(UCSB)has produced gate-first self-aligned metal-insulator-semiconductor heterostructure field-effect ...
Tags: GaN/InAlN, MIS-HFET, UCSB, semiconductor material