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Nucleation
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Laytec Ships in-Situ Metrology System to GaN-on-SiC Customer
Oct 10, 2017In-situ metrology system maker LayTec AG of Berlin, Germany recently shipped a comprehensive EpiCurve TT/Pyro 400 in-situ metrology hybrid system to an industrial customer in North America. The metrology station combines automated in-situ ...
Tags: MOCVD, GaN-on-SiC
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Integrating InGaAs Well in Ridges on 300mm Silicon
Sep 29, 2016Imec and Ghent University in Belgium have used aspect ratio trapping (ART) techniques to produce indium gallium arsenide (InGaAs) multiple quantum wells (MQWs) on 300mm-diameter silicon in a ridge format that could be used in future laser ...
Tags: InGaAs MQWs, InGaAs Laser diodes, Imec and Ghent University
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Gallium Arsenide Phosphide Solar Cells on Silicon with Record 12% Efficiency
Aug 26, 2016Yale University and University of Illinois Urbana in the USA have improved the efficiency of gallium arsenide phosphide (GaAsP) solar cells on silicon (Si) by reducing threading dislocation densities (TDDs) [Kevin Nay Yaung et al, Appl. ...
Tags: GaAsP solar cells, GaAsP, MBE, MOCVD
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Subwavelength Micro-Disk Lasers on Exact (001) Silicon Substrate
Jun 23, 2016Researchers in Hong Kong and USA have been working on producing optically pumped micro-disk lasers on exact (001) silicon [Yating Wan et al, Appl. Phys. Lett., vol108, p221101, 2016]. The team from Hong Kong University of Science and ...
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Silicon Dioxide Charge Inverter Boosts Hole Injection in IngaN LEDs
Apr 21, 2016Researchers based in China, Singapore and Turkey have used an extremely thin layer of silicon dioxide (SiO2) insulator as a charge inverter in indium gallium nitride (InGaN) light-emitting diodes (LEDs), improving light output power and ...
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Aixtron's AIX G5+ C Qualified for Manufacturing of High-Voltage GaN-on-Si Materials in Joint Project with Imec
Apr 19, 2016Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that its G5+ C multi-wafer batch metal-organic chemical vapor deposition (MOCVD) platform has been qualified for the manufacturing of specific buffer layers as ...
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III-Nitride High-Electron-Mobility Transistors on Flexible Tape
Apr 11, 2016Researchers in France claim the first demonstration of 10GHz large-signal microwave power performance for flexible aluminium gallium nitride (AlGaN) barrier high-electron-mobility transistors (HEMTs) [S. Mhedhbi et al, IEEE Electron Device ...
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Direct Growth Of III-V Quantum Dot Lasers On Silicon Substrate
Mar 15, 2016Researchers in the UK have claimed the first demonstration of laser diodes grown directly on silicon that perform up to 75°C and 120°C under continuous wave (cw) and pulsed operation, respectively [Siming Chen et al, Nature ...
Tags: Quantum dot lasers, GaAs, Silicon substrate, MBE
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Thinning Buffer Layers for GaN-on-Silicon Light-Emitting Diodes
Dec 2, 2015Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...
Tags: GaN-on-silicon LEDs, Plessey MOCVD
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Angry Orchard Develops Orchard Glass for Cider Connoisseurs
Oct 26, 2015US-based cider maker Angry Orchard has introduced a new glass christened the Orchard Glass, designed for hard cider. Cider is a beverage that caters to unique taste that lies somewhere between wine and beer. The cider makers wanted to ...
Tags: Orchard Glass, Cider Connoisseurs
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A 42% Enhancement in Light Output From Flip-Chip Ingan LEDs
Jan 8, 2015Researchers at Chinese Academy of Sciences’ Institute of Semiconductors have achieved a 42% enhancement in light output from flip-chip indium gallium nitride (InGaN) light-emitting diodes (LEDs) by incorporating a photonic crystal ...
Tags: photonic crystal(PHC)structure, light-emitting diodes, Electrical
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NTT Released GAN HEMTs From Sapphire Substrate to Thermally Conducting Copper
Dec 4, 2014NTT Basic Research Laboratories in Japan has used a hexagonal boron nitride (h-BN) layer to release and transfer gallium nitride (GaN) high-electron-mobility transistors (HEMTs) from sapphire substrate to thermally conducting copper, ...
Tags: Boron Nitride, GaN Transistors
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The Light Output Power for The Sc-Qb LED Was 47% Higher Than for a Thin QB Device
Nov 19, 2014Researchers based in China have found “remarkably reduced efficiency droop” from staircase (SC) thin indium gallium nitride (InGaN) quantum barrier (QB) light-emitting diodes (LEDs) [Kun Zhou et al, Appl. Phys. Lett., vol105, ...
Tags: High Current, remarkably reduced efficiency droop, Electrical
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GaN Micro-Rods Grown on Graphene Yield Flexible LEDs
Sep 26, 2014Currently, most flexible electronic and optoelectronic devices are fabricated using organic materials. However, for these devices inorganic compound semiconductors such as gallium nitride (GaN) can provide advantages over organic materials ...
Tags: LEDs, LED displays, Electrical, Electronics
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Researchers in USA and Saudi Arabia Explored The Use of VdWE to Grow GaAs On Silicon
Sep 10, 2014Researchers in USA and Saudi Arabia have been exploring the potential of using 'van der Waals epitaxy' (vdWE) to grow gallium arsenide (GaAs) on silicon [Yazeed Alaskar et al, Adv. Funct. Mater., published online 26 August 2014]. The team ...
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