PowerSphyr Inc of Danville, CA, USA – which delivers end-to-end wireless power charging solutions – and GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for ...
Following development that was partially supported by Japan’s New Energy and Industrial Technology Development Organization (NEDO), Tokyo-based Mitsubishi Electric Corp is to launch the MGFG5H3001, a Ka-band (26–40GHz) 8W ...
Tags: Power Transmitters, Mitsubishi
Tokyo-based Mitsubishi Electric Corp is expanding its lineup of gallium nitride high-electron-mobility transistors (GaN HEMTs) to include models operating at frequencies of 13.75–14.5GHz with saturated output power of 100W (50.0dBm) ...
Tags: Mitsubishi Electric, GaN HEMTs
Tokyo-based Mitsubishi Electric Corp has developed the MGFK47G3745 gallium nitride(GaN)high-electron-mobility transistor(HEMT)Ku-band(12–18GHz)amplifier for satellite earth stations. Picture:Simplified schematic of amplifier. ...
Tags: Electrical, Mitsubishi, Electric