The global market for radio-frequency (RF) power semiconductor devices – spanning silicon (LDMOS), gallium arsenide (GaAs) and gallium nitride (GaN) – will increase at a compound annual growth rate (CAGR) of nearly 12% during ...
Tags: Semiconductor
Yole Développement’s ‘RF Power Market and Technologies 2017: GaN, GaAs and LDMOS Report’ forecasts that, after shrinking in 2015 and 2016 as telecom operators invested less, the total RF power semiconductor market ...
Tags: Semiconductor, 4G networks
Spending on RF high-power semiconductors for the wireless infrastructure markets continues to flatten out in 2017, despite the fact that the overall market hit well over $1.4bn in 2016, according to ABI Research. While certain market and ...
Tags: GaN, High-Power Semiconductor
The RF power semiconductor market will grow from $10.57bn in 2015 to $31.26bn in 2022, rising at a compound annual growth rate (CAGR) of 15.4% between 2016 and 2022, forecasts the firm MarketsandMarkets. According to the report 'RF Power ...
Tags: Marketsandmarkets, CAGR
After a successful 2013, the market for RF power semiconductors for wireless infrastructure blew off the chart in 2014, according to a new report from market analyst firm ABI Research. The Asia-Pacific region, and China specifically, ...
Spending on microwave RF power semiconductors will rise to more than $300m by 2019 as the availability of new gallium nitride (GaN) devices for 4-18GHz becomes more pervasive, according to the report 'Microwave RF Power Semiconductors' from ...
Tags: ABI RF power semiconductors GaN, Electrical, Electronics
Spending on RF power semiconductors for the wireless infrastructure markets leapt up again in 2013 to more than $1bn, according to the latest study ‘RF Power Semiconductors’ from ABI Research’s High-Power Active Devices ...
Markets for pulsed RF power devices up to 18GHz are expected to show continued solid growth over the next five years - exceeding $250m by 2018 - despite the current economic turmoil and cuts in defense spending, according to the study ...
Tags: ABI RF power semiconductors GaN, Electrical, Electronics
Spending on microwave RF power semiconductors has been kick-started by the availability of new gallium nitride (GaN) devices for 4-18GHz, says market intelligence firm ABI Research in its new report 'Microwave RF Power Semiconductors' (part ...
Tags: Semiconductor, Electrical, Electronics
Nitronex LLC of Durham, NC, USA, which designs and makes gallium nitride (GaN)-based RF power transistors for the defense, communications, broadband, and industrial & scientific markets, has named David W. Runton as its new VP of ...
Although 2012 turned out to be an off year for RF power amplifiers and devices for wireless infrastructure,the market still held its own,says market analyst firm ABI Research in its report'RF Power Amplifiers'.This year should be viewed as ...
Tags: RF power amplifiers, LTE, ABI Research, wireless infrastructure