AgileSwitch LLC of Philadelphia, PA, USA - which produces plug-and-play, programmable silicon IGBT and silicon carbide (SiC) MOSFET gate drive assemblies to address demands for higher performance and functionality at higher voltages and ...
Tags: SiC MOSFET, AgileSwitch LLC
The global gallium nitride (GaN) power device market will rise at a compound annual growth rate (CAGR) of 24.5% from 2016 to $2.6bn in 2022, according to the report 'GaN Power Devices Market - Global Forecast to 2022' from ...
Tags: GaN power devices
Power semiconductor device manufacturer Rohm Co Ltd of Kyoto, Japan has developed a 1200V/300A full-SiC (silicon carbide) power module - integrating a SiC-SBD (Schottky barrier diode) and SiC-MOSFET (metal-oxide-semiconductor field-effect ...
Metrology and inspection equipment maker Lasertec Corp of Yokohama, Japan has launched SICA88, the latest model of its SiC wafer inspection and review systems. Featuring both surface and photoluminescence (PL) inspection capabilities, ...
Tags: Lasertec, SiC Wafers
Japan's Rohm Co Ltd has started mass production of what it claims is the first silicon carbide (SiC) MOSFET (metal-oxide-semiconductor field-effect transistor) with a trench structure (where the gate is formed on the sidewall of a groove in ...
ROHM Semiconductor has extended its European distribution agreement with Rutronik to a worldwide franchise for the entire ROHM products portfolio. Rutronik has been marketing ROHM devices since 1999. For the second consecutive year, ...
Tags: dynamic market segments, management solutions, Electrical
SAN FRANCISCO – Panasonic, Sanyo, Hitachi et al. fixed prices on “aluminum and tantalum electrolytic capacitors” for circuit boards for nearly a decade, Chip-Tech claims in Federal Court; click headline for defendants. ...
Tags: Capacitor, Price, Electrical, Electronics
The silicon carbide (SiC) semiconductor market will increase at a compound annual growth rate (CAGR) of 42% from 2014 to $3182.89m in 2020, according to a new report from MarketsandMarkets (‘Silicon carbide (SiC) in semiconductor ...
Tags: SiC Semiconductor, Semiconductor
Many SiC-based substrate manufacturers exhibited 6-inch (150mm)-diameter wafers at ICSCRM 2013, an international conference on SiC-based power semiconductors, which took place from Sept 29 to Oct 4, 2013, in Miyazaki, Japan. Six-inch ...
Tags: SiC Wafers, Lighting
ROHM Semiconductor of Santa Clara, CA (the US arm of system LSI, discrete components and module product maker ROHM Co Ltd of Kyoto, Japan) has launched two 80milliOhm 1200V silicon carbide MOSFETs, the SCT2080KE and SCH2080KE, designed to ...
Tags: Electrical, Electronics
ROHM Co., Ltd. (Kyoto-based) developed a 4-wire LED driver for LCD TV panels, achieving significantly lower power consumption. According to the available information and confirmation from relevant TV makers, the power consumption of ...
Tags: LCD TV Panels, LED Driver
Rohm Co Ltd of Kyoto, Japan has started mass-production of the BSM180D12P2C101 1200V/180A-rated silicon carbide (SiC) metal–oxide–semiconductor (MOS) module for inverters/converters used in industrial equipment, photovoltaic ...
Tags: SiC MOS module, Schottky diode, inverters
For fourth-quarter 2012, NeoPhotonics Corp of San Jose, CA, a vertically integrated designer and manufacturer of both indium phosphide (InP) and silica-on-silicon photonic integrated circuit (PIC)-based modules and subsystems for ...
Tags: NeoPhotonics Corp, indium phosphide, communications networks
NeoPhotonics Corp of San Jose, CA, USA, a vertically integrated designer and manufacturer of both indium phosphide (InP) and silica-on-silicon photonic integrated circuit (PIC)-based modules and subsystems for bandwidth-intensive, ...
Tags: NeoPhotonics, semiconductor, semiconductor optical components
Rohm Co Ltd has showcased a planer LED lighting panel featuring LED packages with a high color rendering index as high as 98 at CEATEC JAPAN 2012 held from Oct 2 to 6,2012. High color rendering index According to the firm,the panel ...