IXYS Corp of Milpitas, CA, USA and Leiden, The Netherlands, which provides power semiconductors and mixed-signal ICs for power conversion and motor control applications, has announced availability of its IXFN50N120SK and IXFN70N120SK 1200V ...
Power semiconductor device manufacturer Rohm Co Ltd of Kyoto, Japan has developed a 1200V/300A full-SiC (silicon carbide) power module - integrating a SiC-SBD (Schottky barrier diode) and SiC-MOSFET (metal-oxide-semiconductor field-effect ...
STMicroelectronics of Geneva, Switzerland has unveilled a family of high-voltage silicon carbide (SiC) power MOSFET products, enabling power supply designers to drive up energy efficiency in applications such as solar inverters and electric ...
Tags: Sic Power Mosfets, STMicroelectronics, high-voltage silicon carbide