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Silicon Power
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Kyoto University Professor Hiroyuki Matsunami Awarded Honda Prize for Research on SiC Power Devices
Sep 27, 2017Honda Foundation (a public-interest incorporated foundation created by Honda Motor Co Ltd’s founder Soichiro Honda and his younger brother Benjiro Honda) says that the Honda Prize 2017 will be awarded to Kyoto University professor ...
Tags: Power Devices
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Mitsubishi Electric Develops SiC Mosfet with Record Power Efficiency for 1200V-Class Power Device
Sep 25, 2017At the International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) in Washington DC (17-22 September), Tokyo-based Mitsubishi Electric Corp unveiled a silicon carbide (SiC) metal-oxide-semiconductor field-effect ...
Tags: Power Device, Mitsubishi, SiC Mosfet
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Microsemi Awarded Contract to Speed Adoption of SiC Technology as New Member of PowerAmerica
Aug 23, 2017Microsemi Corp of Aliso Viejo, CA, USA (which makes chips for aerospace & defense, communications, data-center and industrial markets) has become a member of PowerAmerica — a manufacturing institute consisting of public and private ...
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ABB's Sic-Based Battery Charger for Trains Shrinks Size Tenfold and Cuts Weight by 80%
Sep 21, 2016At the InnoTrans trade show in Berlin, Germany (20-23 September), ABB of Zurich, Switzerland is launching a next-generation battery charger based on silicon carbide (SiC) power semiconductors for use in all rail applications. Train ...
Tags: ABB, InnoTrans trade show in Berlin, Sic-based battery charger
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Wide-Bandgap Power Semiconductor Device Market to Grow at 33% Annually to $3.7bn in 2025
Aug 1, 2016Due to falling prices and the commercial availability of wide-bandgap (WBG) semiconductor power devices from multiple sources, the adoption of silicon carbide (SiC) and gallium nitride (GaN) power devices in power supplies for computers, ...
Tags: Semiconductor, GaN power devices
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GaN Systems Announces 10x Production Increase at TSMC
Dec 2, 2015GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, says that Taiwan Semiconductor Manufacturing Corporation (TMSC, the ...
Tags: GaN Systems, E-mode GaN FETs, TSMC
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EPC Publishes DC-DC Conversion Handbook
Sep 18, 2015Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has published a handbook, 'DC-DC ...
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Cambridge Electronics Launches GaN Transistors and Power Electronic Circuits
Aug 10, 2015Cambridge Electronics Inc (CEI) – which was spun off from Massachusetts Institute of Technology (MIT) in 2012 – has announced a range of gallium nitride (GaN) transistors and power electronic circuits targeted at cutting energy ...
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Silicon Carbide Chip Business Was Worth More Than $133m
Aug 4, 2015According to the report 'GaN and SiC for power electronics applications' from Yole Développement, in 2014 the silicon carbide (SiC) chip business was worth more than $133m, with power factor correction (PFC) and photovoltaics (PV) ...
Tags: SiC Market, power electronics
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Exagan Raised €5.7m to Produce High-Speed Power Switching Devices on 200mm Wafers
Jun 25, 2015Exagan of Grenoble, France, a gallium nitride (GaN) technology start-up that enables smaller and more efficient electrical converters, has raised €5.7m in first-round financing that will be used to produce high-speed power switching ...
Tags: GaN-on-Si, GaN switching device
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Coventry Is Participating in a £9.5m Government Initiative
May 14, 2015Anvil Semiconductors Ltd of Coventry, UK is participating in a £9.5m government initiative to modernize the UK energy infrastructure to cope with the unprecedented change in energy consumption, generation and distribution. UK ...
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EPC Introduces Wide-Pitch eGaN FETs Enabling High Current
Apr 15, 2015Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced an eGaN FET designed with a ...
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Hybrid Prototype and Fuel Cell Bus Evaluate The Performance of SiC Power Semiconductors
Jan 30, 2015Using a Camry hybrid prototype and a fuel cell bus, Tokyo-based Toyota Motor Corporation aims this year to conduct tests on the streets of Japan that will evaluate the performance of silicon carbide (SiC) power semiconductors, which could ...
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Dulles Announce Availability of a Gate Driver Evaluation Board
Nov 24, 2014Silicon carbide (SiC) power semiconductor supplier GeneSiC Semiconductor Inc of Dulles, VA, USA has announced availability of a gate driver evaluation board and has expanded its design support for its SiC junction transistor (SJT, claimed ...
Tags: SiC Junction Transistors, Driver Evaluation Board, Electrical
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EPC Presenting Gan Technology for Wireless Energy Transfer
Jun 13, 2014At the PCIM (Power Conversion Intelligent Motion) Asia 2014 conference in Shanghai World Expo Exhibition and Convention Center, China (17-19 June), Michael de Rooij (executive director, Application Engineering) from Efficient Power ...
Tags: Electrical, Electronics
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