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Texas Instruments
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TI Expands GaN Power Portfolio with Smallest and Fastest GaN FET Drivers
Mar 7, 2018Expanding on its gallium nitride (GaN) power portfolio, Texas Instruments Inc (TI) has launched two high-speed GaN field-effect transistor (FET) drivers to create more efficient, higher-performing designs in speed-critical applications such ...
Tags: GaN Power, GaN FET Drivers
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Millimeter-Wave and Microwave RF Transceiver Market Growing at 11.56% CAGR to 2021
Dec 27, 2017© Semiconductor Today Magazine / Juno Publishing The global market for millimetre-wave and microwave RF transceivers (including applications in mobile phones, tablets, smart TVs, PCs and laptops, and set-top boxes) will grow at a ...
Tags: Microwave RF Transceiver, smart TV
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Compound Semiconductor Market to Grow at 8.47% CAGR to 2021
Jun 29, 2017The global compound semiconductor market will rise at a compound annual growth rate (CAGR) of 8.47% during 2017-2021, forecasts market research firm Technavio. The report ‘Global Compound Semiconductor Market 2017-2021’ ...
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TI Launches High-Voltage, Three-Phase High-PWM-Frequency GaN Inverter Reference Design for 200V AC Servo Drives and Robotics
Jun 29, 2017Texas Instruments Inc (TI) has launched a three-phase, gallium nitride (GaN)-based inverter reference design that helps engineers build 200V, 2kW AC servo motor drives and next-generation industrial robotics with fast current-loop control, ...
Tags: GaN Inverter, AC Servo Drives
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Skyworks Launches Front-End Module for Smart Energy and Iot Applications
Sep 20, 2016Skyworks Solutions Inc of Woburn, MA, USA (which manufactures analog and mixed-signal semiconductors) has introduced a highly integrated 470-510MHz front-end module (FEM) that is suitable for smart energy, smart metering (electric, gas, ...
Tags: Skyworks Solutions, FEM, smart energy
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EPC Offers 15MHz Half-Bridge Development Boards Using eGaN FET Synchronous Bootstrap Augmented Gate Drive
Apr 5, 2016Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has made available the EPC9066, EPC9067 ...
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GaN Power Devices Market to Grow at 24.5% to $2.6bn in 2022
Feb 29, 2016The global gallium nitride (GaN) power device market will rise at a compound annual growth rate (CAGR) of 24.5% from 2016 to $2.6bn in 2022, according to the report 'GaN Power Devices Market - Global Forecast to 2022' from ...
Tags: GaN power devices
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Experts Find Serious Security Flaws in ZigBee Connected Devices
Nov 12, 2015Philips Hue LED bulbs and other smart home devices that incorporate ZigBee wireless standards are vulnerable to hacking, according to recent findings by IT firm Cognosec. At a Black Hat USA conference in Las Vegas recently Cognosec senior ...
Tags: Security Flaws, ZigBee devices, LED bulbs
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Pocket Projectors: Now Showing Major Growth
Nov 5, 2015Pocket projector; mini projector; pico-projector; nano-projector. The muddle of names that has sprung up around these miniature display products succeeds at least in dragging our thoughts away from the projectors that we are more familiar ...
Tags: Pocket Projectors, miniature display products, LEDs, laser
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Automotive 'a Great Opportunity' for Photonics – Analyst
Nov 5, 2015Over the past 15 years or so, car manufacturers have been showing increasing interest in new technologies – especially photonics-based developments – in all areas: from powertrain, through lighting to driver assistance and ...
Tags: Photonics, car manufacturers, lighting, smart displaying
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TI Has Launched a 120-V Automotive Grade Half-Bridge Gate Driver
Jul 13, 2015US semiconductor firm Texas Instruments (TI) has launched a 120-V automotive grade half-bridge gate driver, touted to be the fastest in the sector, offering negative voltage handling capability on the high-side pin for hybrid vehicles. ...
Tags: semiconductor manufacture, auto accessories, Texas Instruments
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Power Electronics Will Continue Their Domination of The Markets with an 87% Market Share
Jun 4, 2015Driven by technology innovations, silicon-based power electronics will continue their domination of the fastest-growing and largest markets, allowing silicon to maintain an 87% market share, worth $20bn by 2024, and constraining ...
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EPC Introduces Wide-Pitch eGaN FETs Enabling High Current
Apr 15, 2015Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced an eGaN FET designed with a ...
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EPC Introduced The EPC9115 with an Input Range of 48V to 60V
Mar 24, 2015Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced the EPC9115, a ...
Tags: EPC, DC-DC converter, Electronics
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Ti Introduced The First 80v, 10a Integrated GaN Fet Power-Stage Prototype
Mar 16, 2015Texas Instruments Inc (TI) has introduced what it claims is the first 80V, 10A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage prototype, consisting of a high-frequency driver and two GaN FETs in a half-bridge ...
Tags: GaN FETs, transistor
