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Riber's Revenue Booms in Q1/2017, Driven by Cells Sources for PV and Screen Application
Apr 27, 2017For first-quarter 2017, Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has reported revenue of €9.2m, up dramatically from €1.4m a year ago. ...
Tags: MBE systems, effusion cells
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Seoul Semiconductor Sues Retailer Kmart for Patent Infringement
Sep 20, 2016South Korean LED maker Seoul Semiconductor Co Ltd (SSC), together with its affiliate company Seoul Viosys Co Ltd, has filed a patent infringement lawsuit in the US District Court for the Central District of California against global retail ...
Tags: SSC, Seoul Viosys, Kmart
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Reducing Misfit Dislocations in Green Semi-Polar Light-Emitting Diodes
Aug 26, 2016University of California Santa Barbara (UCSB) in the USA has used limited-area epitaxy (LAE) on semi-polar gallium nitride (GaN) substrates to reduce misfit dislocation (MD) densities in multiple quantum well (MQW) green light-emitting ...
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Monolithic Band-Engineered Semi-Polar White Light-Emitting Diode
Aug 12, 2016University of California Santa Barbara (UCSB) in the USA has developed a monolithic white light-emitting diode (LED) with blue light produced by electrical pumping, and green/'red' by optical pumping from the blue source [S. J. Kowsz et al, ...
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UCSB Professor and Integrated Photonics Expert John Bowers Receives 2017 IEEE Photonics Award
Aug 8, 2016John Bowers, a professor of electrical and computer engineering and of materials at University of California Santa Barbara (UCSB), has been selected to receive the 2017 Institute of Electrical and Electronics Engineers (IEEE) Photonics ...
Tags: Integrated Photonics, PICs
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Juniper to Acquire Silicon Photonics Firm Aurrion
Aug 8, 2016According to a blog by founder Pradeep Sindhu, optical network product provider Juniper Networks Inc of Sunnyvale, CA, USA has entered into an agreement to acquire the fabless, privately held firm Aurrion of Santa Barbara, CA, USA. ...
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Dependence of Efficiency Droop on Carrier Density in Non-Polar Samples
Jul 16, 2016The University of Manchester and the University of Cambridge in the UK have been comparing efficiency droop in low-temperature photoluminescence (PL) experiments on non-polar m-plane and polar c-plane indium gallium nitride (InGaN) quantum ...
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Correcting Charge Polarization Calculations for III-Nitrides
Jul 7, 2016Researchers at University of California Santa Barbara (UCSB) and Rutgers University in the USA believe that charge polarization in III-nitride materials has not been adequately understood up to now [Cyrus E. Dreyer et al, Phys. Rev. X vol6, ...
Tags: semiconductors, Electronics
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Subwavelength Micro-Disk Lasers on Exact (001) Silicon Substrate
Jun 23, 2016Researchers in Hong Kong and USA have been working on producing optically pumped micro-disk lasers on exact (001) silicon [Yating Wan et al, Appl. Phys. Lett., vol108, p221101, 2016]. The team from Hong Kong University of Science and ...
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Thin-Barrier Quantum Wells Increase Bandwidth of Cyan Light-Emitting Diode
Jun 21, 2016Researchers based in Taiwan and USA have increased the modulation bandwidth of indium gallium nitride (InGaN) light-emitting diodes (LEDs) [Jin-Wei Shi, IEEE Electron Device Letters, published online 26 May 2016]. The enhanced bandwidth was ...
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UCSB-LED Team Reports First Quantum Cascade Laser on Silicon
Apr 22, 2016A team led by Alexander Spott of University of California, Santa Barbara – in collaboration with the US Naval Research Laboratory (NRL) and the University of Wisconsin, Madison – has fabricated what is said to be the first ...
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Gallium Arsenide on V-Groove Silicon Template for Photonics and Electronics
Apr 15, 2016Researchers in Hong Kong and USA have developed indium arsenide (InAs) quantum dot (QD) microdisk lasers directly integrated on silicon (Si) with performance comparable to the best reported for similar devices on gallium arsenide (GaAs) ...
Tags: InAs quantum dot microdisk lasers InAs GaAs substrates
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UCSB's Solid State Lighting & Energy Electronics Center Selects Nippon Sanso's SR-4000HT MOCVD Reactor For UVC-LED Development
Mar 21, 2016Matheson Tri-Gas Inc of Basking Ridge, NJ, USA, together with its parent company Taiyo Nippon Sanso Corp (TNSC) of Tokyo, Japan, says that the Solid State Lighting & Energy Electronics Center (SSLEEC) at the University of California, Santa ...
Tags: Matheson, Taiyo Nippon Sanso, MOCVD, UVC LEDs
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Hybrid Growth of Gallium Nitride Tunnel Junctions
Feb 14, 2016University of California Santa Barbara (UCSB) in the USA has been developing a hybrid technique to create III-nitride tunnel junctions (TJs) using a combination of metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy ...
Tags: Gallium Nitride Tunnel, Hybrid
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Game-Changer: The Market Impact of The Blue LED
Nov 5, 2015When asked whether he had envisioned the impact that his revolutionary blue LED would have in years to come, new Nobel physics laureate Shuji Nakamura’s answer was in typically modest and candid. “No!” he replied in a ...
Tags: blue LED, zinc selenide, semiconductor material, LED lighting
