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Wide bandgap semiconductors
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Leti-Coordinated EU Project Moduled Launches to Develop Drive-Trains for Third-Generation Electric Vehicles
Oct 24, 2017This month sees the launch in Grenoble, France of the three-year, €7.2m European Union ‘Horizon 2020’ project ModulED, which brings together 10 European research institutes, key members of the automotive-industry value ...
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Microsemi Awarded Contract to Speed Adoption of SiC Technology as New Member of PowerAmerica
Aug 23, 2017Microsemi Corp of Aliso Viejo, CA, USA (which makes chips for aerospace & defense, communications, data-center and industrial markets) has become a member of PowerAmerica — a manufacturing institute consisting of public and private ...
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Mentor Graphics Joins Wide Band Gap Integration Power Electronics Consortium in Japan
Oct 12, 2016Electronic hardware and software design and manufacturing solutions provider Mentor Graphics Corp of Wilsonville, OR, USA has joined the Wide Band Gap integration (WBGi) power electronics consortium to participate in thermal management and ...
Tags: Mentor Graphics, WBGi
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CNR-IMM Italy Using Sentech Peald System for New High-K Materials on Wide-Bandgap Devices
Oct 12, 2016SENTECH Instruments GmbH of Berlin, Germany says that the Institute for Microelectronics and Microsystems (CNR-IMM) in Catania – which is part of the Physics and Matter Technologies Department (DSFTM) of the National Research Council ...
Tags: SENTECH Instruments GmbH, CNR-IMM
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NCSU's Freedm Systems Center Develops Low-Cost SiC High-Voltage Switch
Oct 12, 2016Researchers at North Carolina State University (NCSU) have created a high-voltage and high-frequency silicon carbide (SiC) power switch that could cost much less than similarly rated SiC power switches, it is reckoned. The findings could ...
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Hexagonal Boron Nitride Enables Cost-Effective, Compact Solid-State Detection of Neutron Signals
Aug 19, 2016A group of Texas Tech University researchers led by professors Hongxing Jiang and Jingyu Lin has developed hexagonal boron nitride semiconductor as a possible low-cost alternative to helium gas detectors in neutron detection ('Realization ...
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White LEDs Using Blue LED Chips to Disappear?
Aug 18, 2015“It is only a matter of time before white LEDs using blue LED chips will disappear from the market,” said Shuji Nakamura at a forum on GaN technology in July organized by Nikkei Asian Review. The comment from the inventor of ...
Tags: LED chip, Blue LED, Purple LEDs
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GaN Systems Announced New Top-Side Cooling Technology in Its Enhancement-Mode Devices
Mar 24, 2015GaN Systems Inc of Ottawa, Ontario, Canada, a fabless producer of gallium nitride (GaN)-based power switching transistors based on its proprietary Island Technology for power conversion and control applications, has announced new top-side ...
Tags: GaN Systems, Power electronics, Electronics
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EPC Will Be Presenting Three Application-Focused Technical Presentations
May 10, 2014At the PCIM (Power Conversion Intelligent Motion) Europe 2014 conference in Nuremberg, Germany (20-22 May), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power ...
Tags: EPC E-mode GaN FETs GaN-on-silicon, Electrical, Electronics
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STMicroelectronics Unveilled a Family of High-Voltage SIC Power MOSFET Products
Mar 14, 2014STMicroelectronics of Geneva, Switzerland has unveilled a family of high-voltage silicon carbide (SiC) power MOSFET products, enabling power supply designers to drive up energy efficiency in applications such as solar inverters and electric ...
Tags: Sic Power Mosfets, STMicroelectronics, high-voltage silicon carbide
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UND Is Developing Gallium Nitride Quantum Dots in Aluminium Nitride
Feb 21, 2014University of Notre Dame (UND) is developing gallium nitride (GaN) quantum dots in aluminium nitride (AlN) as a route to deep ultraviolet (UV) light-emitting diodes (LEDs) [Jai Verma et al, Appl. Phys. Lett., v104, p021105, 2014]. ...
Tags: UV Light Emission, LEDs
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ABB Is Receiving $2.1m of The $70m Grant Over Five Years
Feb 13, 2014ABB says that it is receiving $2.1m of the $70m grant over five years from the Advanced Manufacturing Office within the US Department of Energy’s Office of Energy Efficiency and Renewable Energy (EERE) that is funding the new Next ...
Tags: ABB, Power Electronics
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GaN Systems Is Presenting a Paper on New Wide-Bandgap Semiconductors
Sep 18, 2013At the 2013 Electric & Hybrid Vehicle Conference & Expo in Novi, MI, USA (17-19 September), GaN Systems Inc of Ottawa, Ontario, Canada, a fabless provider of gallium nitride (GaN)-based power switching semiconductors for power conversion ...
Tags: GaN Systems, Hybrid Vehicles
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SIC Would Offer The Greater Competitive Advantage in Micro-Inverters
Jul 8, 2013Devices with wide-bandgap semiconductors will offer the greater competitive advantage in micro-inverters and small string inverters, reckons market analyst firm Lux Research. Wide-bandgap semiconductors – specifically, silicon ...
Tags: inverters, Electrical, Electronics
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Oxford Has Completed Its Series of Asian Seminars in Beijing
May 24, 2013UK-based etch, deposition and growth system maker Oxford Instruments Plasma Technology (OIPT), part of Oxford Instruments plc, has completed its series of Asian seminars in Beijing, China and Hsinchu, Taiwan, attracting a record total ...
Tags: OIPT, Electrical, Electronics