Working with scientists in Texas and Warsaw, researchers at Finland’s Aalto University have made a breakthrough in revising methods largely discarded 15 years ago (‘Amphoteric Be in GaN: Experimental Evidence for Switching ...
Tags: GaN Power electronics
Researchers based in UK, France, Australia and the USA have developed a chemical epitaxial lift-off (ELO) technique for full 2-inch-diameter gallium nitride (GaN) grown on sapphire and free-standing substrates [Akhil Rajan et al, J. Phys. ...
Tags: GaN, HVPE, free-standing wafers
Researchers in Korea have been developing improved non-alloyed contacts for gallium arsenide (GaAs) complementary metal-oxide-semiconductor (CMOS) and high-electron-mobility transistors (HEMTs) [Seung-Hwan Kim et al, IEEE Electron Device ...
Singulus Technologies AG of Kahl am Main, Germany says that it has taken its product family of vacuum coating systems for solar technology to the next development level and introduced and installed inline sputtering system for copper indium ...
Tags: Singulus, vacuum coating
ZSW (Zentrum für Sonnenenergie- und Wasserstoff-Forschung - or Center for Solar Energy and Hydrogen Research - Baden-Württemberg) of Stuttgart, Germany has boosted the efficiency of cadmium-free copper indium gallium diselenide ...
Tags: ZSW CIGS, Solar Cells
The US Patent Office has issued US Patent No. 8,859,310 to Versatilis LLC of Winooski, VT, USA (a technology and business development firm that focuses on novel materials and processes for electro-optical devices, as well as extending its ...
Tags: US Patent, Semiconductor
University of Liverpool researchers propose replacing a toxic treatment step in cadmium telluride (CdTe) solar cell production with one that is benign, but apparently just as effective [J. D. Major et al, Nature, published online 25 June ...
Turkey's Bilkent University has used hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) to make gallium nitride (GaN) thin-film transistors (TFTs) at temperatures below 250°C [S. Bolat et al, Appl. Phys. Lett., vol104, ...
Tags: HCPA-ALD GaN Thin-film transistors, Electrical, Electronics, Transistors
Researchers in Taiwan have produced zinc oxide/gallium nitride (ZnO/GaN) nano-rod light-emitting diodes [Ya-Ju Lee et al, APL Mater. vol2, p056101, 2014]. The researchers avoided complicated polymer processing by using a shadowing effect to ...
Tags: LED Fabrication, Zinc Oxide
LED chips are a core component in the LED industry. There are currently many domestic and international LED chip manufacturers in China, but there currently are no categorization standards, according to a report by Chinese-language ...
Tags: LED Industry, LED Chips
Nanotechnology is a thriving science. Parts for computers for example are becoming smaller and more precise by the minute. One of the most efficient computers would be the so-called quantum computer. Up to now, its existence has been merely ...
Tags: LED, LCD-display, STM, ZnO
Thin-film processing equipment maker AVACO Co Ltd of Daegu, South Korea, which specializes in sputtering (PVD) vacuum deposition equipment (in-line, cluster, and roll to roll), atomic layer deposition (ALD) equipment, back-end-of-line ...
Tags: PV CIGSSe, Electrical, Electronics
Taiwan’s National Tsing Hua University has developed a method to improve the performance of zinc oxide (ZnO) transparent conductive oxide (TCO) as an electrode for short-wavelength nitride semiconductor light-emitting diodes (LEDs) ...
Tags: zinc oxide, LEDs
Researchers at the Georgia Institute of Technology want to put your signature up in lights – tiny lights, that is. Using thousands of nanometer-scale wires, the researchers have developed a sensor device that converts mechanical ...
Tags: Piezo-Phototronic Effect
Together with researchers at the US Army Aviation & Missile Research, Development & Engineering Center (AMRDEC) and Duke University, a team led by North Carolina State University (NCSU) claims to have solved a long-standing materials ...
Tags: NCSU, ZnO-Based UV Lasers, Electronics