Infineon Technologies AG introduced its first devices in a family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors at this year's European Microwave Week. As part of Infineon’s industry-leading GaN portfoliothe ...
In booth C309 (Hall Ternes) at European Microwave Week (EuMW 2015) in Paris, France (6-11 September), Infineon Technologies AG of Munich, Germany has introduced its first devices in a family of gallium nitride on silicon carbide ...
Tags: EuMW 2015, GaN-on-silicon, GaN-on-SiC, PA
20 June 2012 Mitsubishi develops 170W,70%-efficiency GaN-on-Si PA for base-station transmitters Picture:Mitsubishi Electric's 170W,2.1GHz GaN-on-Si power amplifier. Tokyo-based Mitsubishi Electric Corp has developed a prototype 2GHz ...
Tags: Mitsubishi Electric Corp, GaN-on-Si PA, base-station transmitters