droop GaN EBL

Researchers in South Korea and USA Have Been Developing Graded
Aug 23, 2013
Researchers in South Korea and USA have been developing graded-composition superlattice electron-blocking layers (GSL-EBLs) for nitride semiconductor light-emitting diodes (LEDs) [Jun Hyuk Park et al, Appl. Phys. Lett., vol103, p061104 ...

Tags: LED, droop GaN EBL, Electrical, Electronics, nitride semiconductor