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effect transistors
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EPC Launches High-Efficiency Half-Bridge Development Board Operating up to 10MHz for Point-of-Load DC-DC Conversion
Oct 20, 2017Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – has made available the ...
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EPC Launches Wireless Power Demonstration Kits
Oct 10, 2017Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA - which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications - has announced the availability of two ...
Tags: EPC, Wireless Power Demonstration
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Suny Poly Professor Awarded $750, 000 by DOE to Develop More Efficient, Cost-Effective SiC Power Electronics Chips
Sep 26, 2017State University of New York (SUNY) Polytechnic Institute says that associate professor of nanoengineering Dr Woongje Sung has been selected to receive $750,000 in federal funding from the US Department of Energy (DOE) to develop silicon ...
Tags: Power Electronics Chips, Suny Poly
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Navitas' GaN Power Ics Enable Smallest 65W USB-PD Laptop Adapter
Sep 21, 2017To keep pace with the dramatic size and weight reductions in laptop designs over the last 10 years, Navitas Semiconductor Inc of El Segundo, CA, USA has launched what it claims is the smallest 65W USB-PD (Type C) adapter reference design. ...
Tags: GaN Power, Laptop Adapter
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Navitas Chosen by Poweramerica to Enable High-Efficiency, High-Density Mobile Fast Chargers
Sep 4, 2017PowerAmerica — a manufacturing institute consisting of public and private partners from the semiconductor industry, the US Department of Energy (DoE), national laboratories and academia — in early August selected Navitas ...
Tags: PowerAmerica, Fast Chargers
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EPC Launches Class 4 Airfuel-Compliant Wireless Power Demonstration Kit Transmitting up to 33W
Aug 14, 2017Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the availability of a ...
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Imec Demos First Sub-10nm Germanium Gate-All-Around FETs
Jun 16, 2017At the 2017 Symposia on VLSI Technology and Circuits in Kyoto, Japan (5-8 June), nanoelectronics and photovoltaics research centre Imec of Leuven, Belgium unveiled new process improvements for next-generation devices. For the first time it ...
Tags: Imec, transistors
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EPC Launches GaN Half-Bridge Enabling 12V to 1.8V System Efficiency Over 85% at 5MHz at 14A Output
Jun 2, 2017Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the EPC2111, a 30V ...
Tags: transistors, GaN transistor
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Rohm Expands Full-SiC Power Module Lineup
May 23, 2017Japan’s ROHM Semiconductor has developed 1200V 400A/600A-rated full-silicon carbide (SiC) power modules [BSM400D12P3G002/BSM600D12P3G001] - available in June (for samples and OEM quantities) - optimized for inverters and converters in ...
Tags: power modules, Semiconductor
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Indium Gallium Arsenide Quantum Well Transistors on 300mm Silicon
May 18, 2017Researchers in South Korea and the USA claim record 2190cm2/V-s effective mobility for indium gallium arsenide (InGaAs) quantum well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) on 300mm-diameter (100) silicon ...
Tags: Transistors, MOSFETs
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PowerAmerica Funding Speeds Transphorm's Development of 900V GaN HEMT Product
Apr 25, 2017Due to funding assistance from PowerAmerica – a private-public partnership between the US Department of Energy, industry and academia – Transphorm Inc of Goleta, near Santa Barbara, CA, USA, which designs and manufactures what ...
Tags: PowerAmerica, GaN products
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EPC Issues Ninth Reliability Report
Apr 14, 2017Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced its Phase Nine Reliability ...
Tags: gallium nitride, FETs
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Telcodium Partners with Transphorm on First Redundant Power Supplies Using GaN Fets
Sep 20, 2016Power supply design firm Telcodium of Boucherville, QC, Canada, in collaboration with Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC-qualified 650V gallium nitride (GaN)-based devices for ...
Tags: Telcodium, Transphorm, GaN FETs
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University of Wisconsin–Madison Claims First Carbon Nanotube Transistors to Outperform Silicon
Sep 7, 2016For decades, researchers have tried to harness the unique properties of carbon nanotubes (CNTs) to create high-performance electronics that are faster or consume less power — resulting in longer battery life, faster wireless ...
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Boosting Transconductance in Indium Gallium Arsenide finFETs
Sep 6, 2016Researchers at Massachusetts Institute of Technology (MIT) in the USA have claimed record transconductance for III-V fin field-effect transistors (finFETs) when normalized according to fin width [Alon Vardi and Jesús A. del Alamo, ...
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