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photoluminescence
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Electrically Driven Single-Photon Emission From Atomically Thin Diodes
Oct 12, 2016The UK's University of Cambridge and Japan's National Institute for Materials Science have developed single-photon emission devices using layers of graphene, hexagonal boron nitride (hBN), and transition-metal dichalcogenides (TMDs) [Carmen ...
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Integrating InGaAs Well in Ridges on 300mm Silicon
Sep 29, 2016Imec and Ghent University in Belgium have used aspect ratio trapping (ART) techniques to produce indium gallium arsenide (InGaAs) multiple quantum wells (MQWs) on 300mm-diameter silicon in a ridge format that could be used in future laser ...
Tags: InGaAs MQWs, InGaAs Laser diodes, Imec and Ghent University
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Indium Gallium Nitride Solar Cells with Positive Temperature Coefficient
Sep 20, 2016Researchers in China have developed indium gallium nitride (InGaN) photovoltaic devices that increase in efficiency with temperature up to 423K [Zhaoying Chen et al, Appl. Phys. Lett., vol109, p062104, 2016]. "The positive efficiency ...
Tags: InGaN solar cells InGaN, MOCVD, positive temperature coefficient
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Monolithic Band-Engineered Semi-Polar White Light-Emitting Diode
Aug 12, 2016University of California Santa Barbara (UCSB) in the USA has developed a monolithic white light-emitting diode (LED) with blue light produced by electrical pumping, and green/'red' by optical pumping from the blue source [S. J. Kowsz et al, ...
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Relaxing Multiple Quantum Wells with Low-Temperature Barriers
Jul 27, 2016South China University of Technology has used low-temperature barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve the light output power of light-emitting diodes (LEDs) by 23% to 63.83mW at 65mA [Zhiting ...
Tags: Low-Temperature Barriers, Quantum
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II-VI Purchases Lasertec SICA88 Inspection Analysis Tool for SiC Substrate Manufacturing
Jul 19, 2016II-VI Inc of Saxonburg, PA, USA says that the Advanced Materials Division of its Performance Products Segment in Pine Brook, NJ, has purchased a SICA88 SiC inspection & analysis tool made by the Lasertec Corp of Tokyo, Japan, for ...
Tags: SiC Substrate
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Dependence of Efficiency Droop on Carrier Density in Non-Polar Samples
Jul 16, 2016The University of Manchester and the University of Cambridge in the UK have been comparing efficiency droop in low-temperature photoluminescence (PL) experiments on non-polar m-plane and polar c-plane indium gallium nitride (InGaN) quantum ...
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Subwavelength Micro-Disk Lasers on Exact (001) Silicon Substrate
Jun 23, 2016Researchers in Hong Kong and USA have been working on producing optically pumped micro-disk lasers on exact (001) silicon [Yating Wan et al, Appl. Phys. Lett., vol108, p221101, 2016]. The team from Hong Kong University of Science and ...
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Speed up for Indium Gallium Nitride Two-Dimensional Electron Gas
Jun 20, 2016Xidian University in China has used pulsed metal-organic chemical vapor deposition (MOCVD) to increase indium gallium nitride (InGaN) room-temperature channel mobility to 1681cm2/V-s, which is claimed to be a record [Yachao Zhang et al, ...
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Epitaxial Growth of Laser Diodes on Wafer-Bonded InP/Si Substrates
Jun 12, 2016Sophia University in Japan has developed a technique for growing laser diodes on an indium phosphide (InP) layer bonded to silicon (Si) [Keiichi Matsumoto et al, Appl. Phys. Express, vol9, p062701, 2016]. The researchers claim that this is ...
Tags: Laser Diodes, Si Substrates
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Gallium Arsenide on V-Groove Silicon Template for Photonics and Electronics
Apr 15, 2016Researchers in Hong Kong and USA have developed indium arsenide (InAs) quantum dot (QD) microdisk lasers directly integrated on silicon (Si) with performance comparable to the best reported for similar devices on gallium arsenide (GaAs) ...
Tags: InAs quantum dot microdisk lasers InAs GaAs substrates
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Indium Gallium Nitride Barriers Enhance LED Power And Efficiency
Mar 15, 2016South China University of Technology has shown improved power and efficiency performance for indium gallium nitride (InGaN) light-emitting diodes (LEDs) with 1.2% indium-content multiple-quantum-well (MQW) barriers [Zhiting Lin et al, J. ...
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Vertical Epitaxial Heterostructure GaAs Optical Transducers
Mar 9, 2016Researchers in Canada claim the highest reported optical-to-electric power conversion of more than 65% (Figure 1) for a 150W/cm2 (~1500 suns) tuned narrow spectrum input from high-powered laser diodes [S. Fafard et al, Appl. Phys. Lett., ...
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Exploring Resonant Energy Transfer From Ingan Wells to Polymers
Dec 16, 2015University of Cyprus, Cyprus University of Technology, and University of Crete have been exploring the potential of Frster resonant energy transfer (FRET) from an indium gallium nitride (InGaN) single quantum well (SQW) to a light-emitting ...
Tags: InGaN, InGaN quantum well, FRET
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Scandium Nitride Buffer for Gallium Nitride on Silicon Applications
Dec 8, 2015Researchers in Germany are proposing scandium nitride (ScN) as a suitable buffer for gallium nitride (GaN) on silicon (Si) growth [L. Lupina et al, Appl. Phys. Lett., vol107, p201907, 2015]. The attraction of ScN is a very small mismatch ...
Tags: GaN devices, microscope
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