According to the report 'Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) and Substrate Wafer Market by Technology, Application, Product, Device, & by Geography - Forecast & Analysis to 2013–2022' from MarketsandMarkets, ...
Tags: semiconductor, Electrical, Electronics
The global market for power discrete devices will rise at a compound annual growth rate (CAGR) of 8.43% over 2013-2018, forecasts a new report from TechNavio (the market research platform of Infiniti Research Ltd). According to the ...
Raytheon Company of Waltham, MA, USA says that its technology facility in Glenrothes, Scotland, UK has successfully tested silicon carbide (SiC) mixed-signal devices at temperatures up to 400°C. “Raytheon UK’s aim is to ...
Tags: Raytheon, SiC, silicon carbide, company news
Fairchild Semiconductor(NYSE:FCS),a leading global supplier of high performance power and mobile products,announced an expansion of its distribution agreement with RS Components(RS),the trading brand of Electrocomponents plc(LSE:ECM),a ...
Tags: Fairchild Semiconductor, reseller agreement, RS Components
Global and China Power Device Industry Report, 2011-2012underlines: 1. power device; 2. global and China power device market; 3. power device industry; 4. IGBT, SiC and GaN market and industry outlook; 5. 18 power device players. ...
Tags: Power Device Industry Report, Power Device, power device market
The power discrete and module market will grow by almost$9bn to$26.2bn in 2016,forecasts the 15th edition of an annual report from IMS Research,which this year includes more comparisons of wide-bandgap(silicon carbide and gallium ...
Tags: GaN, SiC, IMS Research, silicon, semiconductor
Infineon held its position as the biggest supplier of power discretes and modules last year,says IMS Research,in a market which fell off sharply in H2. Nonetheless modules grew by 32%in the year and discretes grew 3%. Module growth was ...
Tags: IMS Research, power discrete, Infineon