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The Global Market for Power Discrete Devices Will Rise at a Compound Annual Growth Rate
Feb 24, 2014The global market for power discrete devices will rise at a compound annual growth rate (CAGR) of 8.43% over 2013-2018, forecasts a new report from TechNavio (the market research platform of Infiniti Research Ltd). According to the ...
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Raytheon Has Successfully Tested Silicon Carbide (SIC) Mixed-Signal Devices
Dec 24, 2012Raytheon Company of Waltham, MA, USA says that its technology facility in Glenrothes, Scotland, UK has successfully tested silicon carbide (SiC) mixed-signal devices at temperatures up to 400°C. “Raytheon UK’s aim is to ...
Tags: Raytheon, SiC, silicon carbide, company news
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Electronic components SVF2N65F/N/MJ/D 2A 650V MOSFET
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4A 650V Mosfet SVF4N65F Power Discrete Device MOSFET
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7A 650V SVF7N65T/F/K/S Power Discrete Device MOSFET
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8A 600V SVF8N60T/F Power Discrete Device MOSFET
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12A 650V SVF12N65T/F/K/S Power Discrete Device MOSFET
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Discrete Device SBD10C100T/F/D/S Power Schottky Doide Transistor
