precursor articles & resources on Made-in-China.com

Sofradir's Tropomi Detector Lifts off on Sentinel-5P Satellite

Oct 18, 2017

Sofradir of Palaiseau near Paris, France – a subsidiary of Safran and Thales that makes infrared (IR) detectors for aerospace, defense and commercial markets – says that its detector Tropomi is among the instruments launched on ...

Tags: Sofradir, IR detectors

Umicore Inaugurates Metal-Organic Precursor Production Plant in Germany

Jun 26, 2017

Umicore’s business unit Precious Metals Chemistry of Hanau, Germany has inaugurated its production unit for metal-organic precursor technologies used in the semiconductor and LED markets, respectively TMGa (trimethylgallium) and TEGa ...

Tags: Umicore, Metal-Organic Precursor

Apple Wants The iPhone to Be a Hub for Your Medical Data

Jun 16, 2017

Sources claim that an under-the-radar Apple team are negotiating with developers and hospitals to put all of your medical information into one place: the iPhone. CNBC says it has learned such a secretive team and project exist, with the ...

Tags: Apple, iPhone

ALD Tool Maker Picosun Extends Services Portfolio to Delivery of Precursors

Apr 27, 2017

Atomic layer deposition (ALD) thin-film technology firm Picosun Oy of Espoo, Finland has launched a delivery service for ALD precursor chemicals, implemented in cooperation with several well‐known chemical manufacturers. Picosun ...

Tags: ALD Tool, Precursors

Marie Brizard Wine and Spirits Strengthens Distribution Network Across Several Markets

Dec 13, 2016

Marie Brizard Wine and Spirits (MBWS) has strengthened its distribution networks across several of its main markets including the US, the UK, China, Morocco and Poland. In the United States, MBWS consolidates its partnership with Southern ...

Tags: Wine, Spirits

Integrating InGaAs Well in Ridges on 300mm Silicon

Sep 29, 2016

Imec and Ghent University in Belgium have used aspect ratio trapping (ART) techniques to produce indium gallium arsenide (InGaAs) multiple quantum wells (MQWs) on 300mm-diameter silicon in a ridge format that could be used in future laser ...

Tags: InGaAs MQWs, InGaAs Laser diodes, Imec and Ghent University

Advantech Wireless Releases Second-Generation GaN-Based 125-200w Ka-Band SSPA/BUC

Sep 13, 2016

Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) has launched its second-generation gallium nitride (GaN)-based 125-200W Ka-band UltraLinear solid-state power amplifier/block ...

Tags: GaN, HEMT, Advantech Wireless, SSPA/BUC

Bern Unlimited Revamps Sales Leadership

Jul 18, 2016

Bern Unlimited Inc. has promoted Jeff Cavicchi, formerly National Sales Manager, to Director of Global Operations and named three new leaders to head up sales both in the U.S. and overseas. Cavicchi, a 20-year veteran of the bike ...

Tags: Bern, bike industry

Dependence of Efficiency Droop on Carrier Density in Non-Polar Samples

Jul 16, 2016

The University of Manchester and the University of Cambridge in the UK have been comparing efficiency droop in low-temperature photoluminescence (PL) experiments on non-polar m-plane and polar c-plane indium gallium nitride (InGaN) quantum ...

Tags: Non-Polar Samples, indium gallium nitride

Speed up for Indium Gallium Nitride Two-Dimensional Electron Gas

Jun 20, 2016

Xidian University in China has used pulsed metal-organic chemical vapor deposition (MOCVD) to increase indium gallium nitride (InGaN) room-temperature channel mobility to 1681cm2/V-s, which is claimed to be a record [Yachao Zhang et al, ...

Tags: InGaN, AFM, MOCVD

Vertical Gallium Nitride Schottky Diode Combining High Current/Breakdown

Apr 8, 2016

HRL Laboratories LLC in the USA has developed a gallium nitride (GaN) vertical tunneling Schottky barrier diode (TBS) that gives good combined on and off performance, compared with vertical Schottky barrier diodes (SBDs) [Y. Cao et al, ...

Taiwan LED Maker Epistar Finalizes Qualification of Aixtron's Aix R6 MOCVD System

Apr 6, 2016

Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that Epistar Corp of Hsinchu Science-based Industrial Park, Taiwan (the world's largest manufacturer of LED epiwafers and chips) has achieved all milestones in ...

Tags: MOCVD System, LED, Epistar

Indium Gallium Nitride Barriers Enhance LED Power And Efficiency

Mar 15, 2016

South China University of Technology has shown improved power and efficiency performance for indium gallium nitride (InGaN) light-emitting diodes (LEDs) with 1.2% indium-content multiple-quantum-well (MQW) barriers [Zhiting Lin et al, J. ...

Tags: LEDs, MQW, barriers, InGaN, MOCVD

Non-Alloyed Contacts For Gallium Arsenide Devices

Mar 9, 2016

Researchers in Korea have been developing improved non-alloyed contacts for gallium arsenide (GaAs) complementary metal-oxide-semiconductor (CMOS) and high-electron-mobility transistors (HEMTs) [Seung-Hwan Kim et al, IEEE Electron Device ...

Tags: GaAs, HEMTs, CMOS

Ten Keywords for China-U.S. Relations in 2015

Dec 18, 2015

Throughout 2015, the world has watched with great interest the development of China-U.S. relations, as many believe almost every interaction between the world's top two economies has a bearing on all major global issues. Here are some ...

Tags: China-U.S.Relations

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