Plessey Semiconductors Ltd says that samples of 350mW GaN-on-Si LEDs are now available. The entry-level lighting products are manufactured on Plessey’s 6-inch MAGIC (Manufactured on GaN I/C) line at its Plymouth, England facility. The ...
Tags: Silicon LEDs, Plessey
Recent advances in microelectronics technology and production processes have led to the rapid acceleration in MEMs and LED manufacturing, and breakthroughs in silicon photonics and printed/flexible electronics. But what comes next? The ...
Tags: Electrical, Electronics, LED
Stapp brings more than a dozen years of executive experience in LED lighting technologies to Aledia, most recently in senior management positions at OSRAM, a global leader in SSL manufacturing and marketing. As general manager and senior ...
The agreement was originally announced on April 22, 2013, and the companies have now completed the transfer of Bridgelux GaN-on-Silicon technology assets to Toshiba and inaugurated this new phase of GaN-on-Silicon LED collaboration, ...
Former OSRAM General Manager and CTO Has Played Key Role In Industry's Evolution, Will Aid Aledia's Move Towards Industrialization Aledia, a pioneering developer of WireLED®, a new microwire-based 3D LED technology that dramatically ...
Aledia S.A. of Grenoble, France, which is developing light-emitting diodes based on ‘WireLED’ three-dimensional (3D) microwire GaN-on-silicon technology that is claimed to cut manufacturing costs compared to conventional planar ...
Tags: Solid-State Lighting, Lighting
Expanded Relationship to Drive GaN-on-Silicon Development Bridgelux Inc., a leading developer and manufacturer of LED lighting technologies and solutions, today announced the closing of an agreement with Toshiba Corporation, a ...
After falling 15% in 2012, solar wafer production is forecast to grow 19% in 2013, passing 30GW and recovering to 2011 levels, according to Solarbuzz. However, industry utilization is expected to remain below 60%, and while prices have ...
Tags: Solar Wafer Production, Lighting
Traditionally Gallium Nitride (GaN) LED devices are produced on either sapphire or silicon carbide (SiC) substrates, due to the good crystal lattice matching between the materials and the GaN, with typically 2” or 4” diameter ...
LIVERMORE, Calif. & TOKYO -- Bridgelux Inc., a leading developer and manufacturer of LED lighting technologies and solutions, and Toshiba Corporation (TOKYO:6502), a world-leading electric manufacturer, today announced that they have ...
Tags: Bridgelux, Toshiba, LED Business
Toshiba's white LED package Bridgelux is selling its gallium nitride-on-silicon (GaN-on-Si)?technology and related assets to Toshiba. The news comes as the two companies announced that they will expand their licensing and manufacturing ...
April 23, 2013 - Bridgelux Inc.—a developer and manufacturer of LED lighting technologies and solutions—and Toshiba Corp. have entered into an agreement under which Bridgelux will sell Toshiba its GaN-on-Silicon technology and ...
Tags: LED Lighting, LED, Lighting
LED chip and lighting array maker Bridgelux Inc of Livermore, CA, USA has agreed to sell its gallium nitride-on-silicon (GaN-on-Si) technology and related assets to Tokyo-based semiconductor manufacturer Toshiba Corp. The firms will also ...
Companies Enter Into Agreement for Sale of GaN-On-Silicon Technology / Chip Related Assets to Toshiba, With Expanded Licensing and Manufacturing Collaboration Bridgelux Inc., a leading developer and manufacturer of LED lighting ...
Tags: LED Business, LED
The launch by the European Space Agency (ESA) of its Proba-V earth observation mini-satellite in the coming weeks will represent the first time that a European-made device based on gallium nitride (GaN) will be sent into space. This follows ...
Tags: Mini-Satellite, GaN