M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has launched a gallium nitride on silicon carbide (GaN-on-SiC) HEMT pulsed power transistor operating in the DC-3.5GHz frequency range for civilian and military radar pulsed applications.
Offered in both an enhanced flanged (Cu/W) and flangeless (Cu) ceramic package (providing excellent thermal performance, it is claimed), the MAGX-000035-015000 and MAGX-000035-01500S are gold-metalized unmatched GaN-on-SiC RF power transistors optimized for RF power amplifier applications. The transistors provide a typical 17W of peak output power with 15.5dB of power gain and 63% drain efficiency, as well as ruggedness over multiple octave bandwidths for demanding application. The devices have high voltage breakdowns and a mean time to failure (MTTF) of 600 years.
"The new 15W peak GaN power transistor offers a versatile and high-performance solution for pulsed driver and power applications over a broad frequency range,” says product manager Paul Beasly. “The device is an ideal driver stage for MACOM’s higher-power GaN transistors for L-band and S-band pulsed radar applications.”
