Diamond Microwave Devices Ltd of Leeds, UK (which specializes in high-performance microwave power amplifiers) has launched a range of X-band gallium nitride (GaN)-based pulsed solid-state power amplifiers (SSPA) offering integrated ...
Tags: GaN-on-diamond, radar application
In booth 1655 at the Applied Power Electronics Conference & Exposition (APEC 2016) in Long Beach, CA, USA (20–24 March), Monolith Semiconductor Inc of Round Rock, TX, USA is demonstrating its fast-switching silicon carbide (SiC) ...
Tags: SiC MOSFET, SiC Schottky barrier diodes, SiC power devices
X-FAB Silicon Foundries of Erfurt, Germany - a mixed-signal IC, sensor and micro-electro-mechanical systems (MEMS) foundry – has entered wide-bandgap semiconductor production by announcing the availability of silicon carbide (SiC) ...
Tags: SiC MOSFET SiC Schottky barrier diodes SiC power devices
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that UK-based Plessey Semiconductors Ltd has ordered an AIX G5+ C cluster system (for delivery in third-quarter 2016) to expand its production capacity for ...
Researchers in Canada claim the highest reported optical-to-electric power conversion of more than 65% (Figure 1) for a 150W/cm2 (~1500 suns) tuned narrow spectrum input from high-powered laser diodes [S. Fafard et al, Appl. Phys. Lett., ...
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany received the CS High-Volume Manufacturing Award 2016 for its new fully automated AIX G5+ C metal-organic chemical vapor deposition (MOCVD) system at this year's CS ...
Tags: Aixtron, MOCVD, CS industry Awards, GaN-on-Si
Three-dimensional televisions are not successful because their 3D images do not meet people's expectations. Viewers have to wear 3D glasses, and visual fatigue prevents long-duration viewing. An ideal 3D display technique that overcomes ...
Tags: Micromirrors, 1D Scanning, Display
Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...
Tags: GaN-on-silicon LEDs, Plessey MOCVD
Researchers in the USA have reduced current leakage for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) on silicon to the level achieved for devices produced on much more expensive silicon carbide [Bo Song et ...
Tags: AlGaN, transistors, Silicon
University of Glasgow and University of Cambridge in the UK have claimed the highest frequency performance to date for gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on low-resistivity (LR) silicon (Si) [A. Eblabla et al, ...
II-VI Inc of Saxonburg, PA, USA says that the Advanced Materials Division of its Performance Products Segment in Pine Brook, NJ, which supplies single-crystal silicon carbide (SiC) substrates and CVD-grown polycrystalline diamond materials, ...
Tags: electronics, semiconductor, II-VI, SiC substrates, SiC Wafer
UK-based Plessey Semiconductors is to lead a £1.3m UK government-funded project in conjunction with Aixtron Ltd (the UK subsidiary of deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany) and Bruker Nano ...
Tags: Semiconductors, deposition equipment, LEDs
OEM Group of Phoenix, AZ, USA (which supplies new and re-manufactured semiconductor capital equipment and upgrades focused on emerging markets) says that a leading LED maker has placed a repeat order for an AGHeatpulse RTP (rapid thermal ...
Canada-based GN Thermoforming Equipment has forayed into the form/cut/stack thermoforming market with the launch of GN800 machine. The GN800 has been developed in collaboration with Italy-based industrial equipment supplier Agripak ...
X-FAB Silicon Foundries AG of Erfurt, Germany and Exagan of Grenoble and Toulouse, France have entered into a joint development agreement to industrialize Exagan's GaN-on-silicon technology, begin producing high-speed power switching ...