Swiss researchers have built a flash memory cell using the single-atom-thick materials graphene and molydenum disulfide (MoS2). The cell shows the capability to retain data for ten years and to store one bit per cell. The device has two ...
Hong Kong University of Science and Technology has achieved record maximum drain currents and peak transconductances for enhancement-mode(normally off)metal–oxide–(nitride)semiconductor heterojunction field-effect ...