III-V optoelectronic foundry Compound Semiconductor Technologies Global Ltd (CST Global, a subsidiary of Sweden-based Sivers IMA Holding AB) of Hamilton International Technology Park, Blantyre, near Glasgow, Scotland, UK says that its ...
Tags: PON markets, chemical vapor
Arizona State University (ASU) in the USA claims the first demonstration of 1kV-class aluminium nitride (AlN) Schottky barrier diodes (SBDs) [Houqiang Fu et al, IEEE Electron Device Letters, 5 July 2017]. AlN has a wide bandgap of 6.2eV. ...
Tags: semiconductor, MOCVD
In the presentation ‘Low vertical leakage current of 0.07μm/mm2 at 600V without intentional doping for 7μm-thick GaN-on-Si’ at the 12th International Conference on Nitride Semiconductors (ICNS-12) in Strasbourg, France ...
Tags: technology engineering, epiwafer
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that San’an Optoelectronic Co Ltd (China’s largest LED maker) has completed the qualification of its Close Coupled Showerhead (CCS) process ...
Tags: LEDs, LED products
Researchers in Russia claim “the first demonstration of an injection quantum well microdisk laser fabricated of III-V materials monolithically grown on silicon (001) substrate” [N. V. Kryzhanovskaya et al, Optics Express, vol. ...
Tags: silicon photonics, Lasers
Process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that ultraviolet short-wavelength light-emitting diodes (UV-C LEDs) research firm CrayoNano AS of Trondheim, Norway - which was founded in June 2012 based on research ...
Tags: UV-C LED, Graphene Growth
Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK says that, for first-half 2017, it expects revenue of about £70m, reflecting increased sales in each of its three primary markets. “All business units have ...
Umicore’s business unit Precious Metals Chemistry of Hanau, Germany has inaugurated its production unit for metal-organic precursor technologies used in the semiconductor and LED markets, respectively TMGa (trimethylgallium) and TEGa ...
Tags: Umicore, Metal-Organic Precursor
Researchers in South Korea and the USA claim record 2190cm2/V-s effective mobility for indium gallium arsenide (InGaAs) quantum well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) on 300mm-diameter (100) silicon ...
Tags: Transistors, MOSFETs
LED maker Lumileds of San Jose, CA, USA says that, at the IEEE Honors Ceremony in San Francisco on 25 May during the IEEE Vision, Innovations, and Challenges (IEEE VIC) Summit, George Craford (the Lumileds Solid State Lighting Fellow) will ...
For first-quarter 2017, epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has reported revenue of $94.4m, rebounding further from $93.6m last quarter and up 21% on $78m a year ago. This is above ...
Tags: LED Demand, LED industry
As 2016 comes to an end, there were many exciting and surprising technology breakthroughs, based on statistics complied by LEDinside there were at least 10 major technology advancements this year. American researchers make droop free LEDs ...
Jing Zhang, an engineering faculty member at Rochester Institute of Technology, has received a $305,000 grant from the US National Science Foundation (NSF) to acquire an inductively coupled plasma reactive-ion etching (ICP-RIE) system for ...
Tags: RIT, NSF, ICP-RIE system
Imec and Ghent University in Belgium have used aspect ratio trapping (ART) techniques to produce indium gallium arsenide (InGaAs) multiple quantum wells (MQWs) on 300mm-diameter silicon in a ridge format that could be used in future laser ...
Tags: InGaAs MQWs, InGaAs Laser diodes, Imec and Ghent University
Researchers in China have developed indium gallium nitride (InGaN) photovoltaic devices that increase in efficiency with temperature up to 423K [Zhaoying Chen et al, Appl. Phys. Lett., vol109, p062104, 2016]. "The positive efficiency ...
Tags: InGaN solar cells InGaN, MOCVD, positive temperature coefficient