Anvil Semiconductors Ltd of Coventry, UK and the Cambridge Centre for GaN (part of University of Cambridge’s Department of Materials Science and Metallurgy) have grown cubic GaN on 3C-SiC on silicon wafers by metal-organic chemical ...
Tags: green LEDs, silicon wafers, Electrical
Ohio State University and University of Illinois at Chicago have developed deep ultraviolet (DUV) light-emitting diodes (LEDs) based on III-nitride semiconductor nanowires [Thomas F Kent et al, Nanotechnology, vol25, p455201, 2014]. The ...
Researchers based in China have found “remarkably reduced efficiency droop” from staircase (SC) thin indium gallium nitride (InGaN) quantum barrier (QB) light-emitting diodes (LEDs) [Kun Zhou et al, Appl. Phys. Lett., vol105, ...
Tags: High Current, remarkably reduced efficiency droop, Electrical
University of California Santa Barbara (UCSB) and Mitsubishi Chemical Corp have reported indium gallium nitride (InGaN) light-emitting diodes (LEDs) with thicker active regions enabled by growing the crystal on the semi-polar (30-3-1) plane ...
Singapore's Nanyang Technological University and Turkey's Bilkent University have developed a graded multiple quantum well (MQW) structure with the aim of increasing light output power and reducing efficiency droop in 450nm indium gallium ...
Tags: LED, LED Light, Electrical, Electronics
Researchers at the Vienna University of Technology (TU Wien) in Austria have combined two semiconductor materials, each consisting of a layer just three atomic thick, to create a new structure that holds promise for a new kind of solar ...
Tags: Thin-film PV, Electrical, Electronics
Researchers in Taiwan have produced zinc oxide/gallium nitride (ZnO/GaN) nano-rod light-emitting diodes [Ya-Ju Lee et al, APL Mater. vol2, p056101, 2014]. The researchers avoided complicated polymer processing by using a shadowing effect to ...
Tags: LED Fabrication, Zinc Oxide
Researchers based in Singapore and Turkey have demonstrated a last quantum barrier (LQB) structure for indium gallium nitride (InGaN) light-emitting diodes (LEDs) that improves the electron blocking and hole injection of an aluminium ...
Tags: LEDs GaN InGaN MOCVD, Electrical, Electronics, LED
Researchers in Switzerland and Norway have used strain to alter the light-emitting properties of gallium arsenide (GaAs) nanowires [G. Signorello et al, Nature Communications, vol5, p3655, published online 10 Apr 2014]. The researchers from ...
Tags: Electrical, Electronics
Scientists at the US Naval Research Laboratory (NRL) have suggested a method that could significantly increase the efficiency of green-blue-ultraviolet LEDs based on GaInN/GaN, AlGaN/GaN and AlInN/GaN quantum wells. It is reckoned that ...
Researchers associated with Taiwan National Central University and Epistar Corp are developing a method to transfer indium gallium nitride (InGaN) light-emitting diodes (LEDs) to ceramic aluminium nitride (AlN) substrates for high-voltage ...
Tags: InGaN LED, Ceramic Substrate
University of Notre Dame (UND) is developing gallium nitride (GaN) quantum dots in aluminium nitride (AlN) as a route to deep ultraviolet (UV) light-emitting diodes (LEDs) [Jai Verma et al, Appl. Phys. Lett., v104, p021105, 2014]. ...
Tags: UV Light Emission, LEDs
Swiss scientists have uncovered the mechanism by which novel, revolutionary solar cells based on lead iodide perovskite light-absorbing semiconductor transfer electrons along their surface. The finding shows these devices constitute a new ...
Tags: Electrical, Electronics, Solar Cell, Energy, Solar
Scientists at the University of California, San Diego have developed a new genetic platform that allows efficient production of naturally occurring molecules, and have used it to produce a novel antibiotic compound. Their study, published ...
Researchers in Japan have created indium phosphide (InP) nanowire (NW) solar cell structures with internal quantum efficiencies (IQEs) that beat the performance of bulk InP-based devices in the short-wavelength range of 300-570nm [Masatoshi ...
Tags: INP Nanowire solar cells, InP SA-MOVPE p-type, InP substrates