Agilent Technologies Inc of Santa Clara, CA, USA has announced several innovations for the 2014 release of its suite of device modeling and characterization software tools. The suite comprises the Integrated Circuits Characterization and ...
Tags: GaN HEMTs, 3D Finfets
The need for high-power, high-frequency transistors is increasing steadily, commensurate with the huge demand for wireless telecommunications, notes market research firm Yole Développement in its report ‘RF GaN Technology & ...
Cree Inc of Durham, NC, USA has introduced what it claims are the industry’s highest-power continuous wave (CW) RF gallium nitride (GaN) high-electron-mobility transistors (HEMTs) packaged in a dual-flat no-leads (DFN) format. ...
Tags: GaN Transistors, CREE
As high-data-rate applications put more strain on LTE wireless networks, solutions such as small-cell base-stations (BTS) and carrier aggregation will be needed to bridge the bandwidth gap in high traffic areas. In response to broader ...
Tags: GaN HEMTs, LTE wireless networks
According to the report 'Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) and Substrate Wafer Market by Technology, Application, Product, Device, & by Geography - Forecast & Analysis to 2013–2022' from MarketsandMarkets, ...
Tags: semiconductor, Electrical, Electronics
Singapore's Nanyang Technological University has developed conventional aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) with record-breaking figures-of-merit (FOMs) for frequency and breakdown performance [Kumud ...
Tags: Electrical, Electronics
At the 39th annual Government Microcircuit Applications and Critical Technology (GOMACTech 2014) conference in Charleston, SC, USA (3 April), Alex Lidow, CEO & co-founder of Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, ...
Tags: DC-DC Converter, EPC
Hong Kong University of Science and Technology (HKUST) is developing techniques to monolithically integrate high-electron-mobility transistors (HEMTs) and light-emitting diodes (LEDs) based on aluminium indium gallium nitride (AlInGaN) ...
Tags: Nitride Semiconductor, LEDs, LED regions
At last year’s IEEE Applied Power Electronics Conference & Exposition (APEC), Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and delivers power conversion devices and modules) introduced the first - and only - ...
Tags: Transphorm GaN-on-Si, Electrical
RWTH Aachen University has reported the first small-signal response frequency characteristics for p-channel gallium nitride (GaN) heterostructure field-effect transistors (HFETs) [Herwig Hahn et al, Jpn. J. Appl. Phys., vol52, p128001, ...
Tags: GaN HFETs GaN MOCVD, Electrical, Electronics
China’s Xidian University has produced ‘normally-off’ gallium nitride (GaN) high-electron-mobility transistors (HEMTs) with a thin high-aluminium-content aluminium gallium nitride (AlGaN) barrier layer [Kai Zhang et al, ...
Tags: Xidian University, normally-off, GaN, HEMTs
Researchers in Taiwan have used a palladium oxide (PdO) gate interlayer to improve nitride semiconductor high-electron-mobility transistor (HEMT) performance [Ray-Ming Lin et al, Jpn. J. Appl. Phys., vol52, p111002, 2013]. In particular, ...
Tags: HEMT MOCVD GaN, Electrical, Electronics
Hong Kong University of Science and Technology (HKUST) has developed a 600V gallium nitride on silicon (GaN/Si) normally-off metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) with large gate swing and low current ...
Tags: GaN MIS-HEMTs AlGaN, Electrical, Electronics
Singapore’s Nanyang Technological University (NTU) has developed a passivation process for aluminium gallium nitride on gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs) on silicon substrates that significantly ...
Tags: Nitride HEMTs, Electrical
Taiwan’s National Chiao-Tung University has developed a titanium nitride/copper (TiN/Cu) gate structure for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) that shows improvements over a comparison ...
Tags: GaN HEMT, Electronics