18 October 2012 Lithium aluminate substrate for low-cost nonpolar gallium nitride Researchers based in Germany and the Netherlands have been studying the potential for growing nonpolar gallium nitride(GaN)on lithium ...
LEDs - or Light-Emitting Diodes – are semiconductors that generate narrow-spectrum light when electrically biased in the forward direction of the p-n junction. This effect is a form of electroluminescence. A single LED is often a ...
Tags: LED
Driven by market demand, the semiconductor industry progressed toward consensus on building-block standards for automating LED production on 6-in wafers at the Semicon West conference, explains PAULA DOE. ...
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Singapore’s Nanyang Technological University has made a first demonstration of nitride semiconductor high electron mobility transistors (HEMT) grown on silicon substrates using ammonia molecular beam epitaxy (MBE) rather than the ...
Tags: Singapore, Technological University, electron mobility transistors
According to a filing on 24 August with the US Securities&Exchange Commission(SEC),HexaTech Inc of Morrisville,NC,USA has raised$500,000 in new debt financing involving six investors.A further$54,496 remains still to be raised from ...
Researchers in Switzerland and the USA have reported the first large-signal performance for a gallium nitride on silicon(GaN-on-Si)high-electron-mobility transistors with output power density of 2W/mm and associated peak power-added ...
Tags: GaN/Si, HEMTs, high-electron-mobility transistors, frequency performance
US-based researchers have reported record external quantum efficiencies(EQE)of 10.4%for deep ultraviolet light-emitting diodes(DUV-LEDs)emitting at a wavelength of 278nm at a continuous-wave current of 20mA[Max Shatalov et ...
Hong Kong University of Science and Technology has achieved record maximum drain currents and peak transconductances for enhancement-mode(normally off)metal–oxide–(nitride)semiconductor heterojunction field-effect ...
5 June 2012 Kyma demos K-Slice diamond wire technology on sapphire boules Picture:First slices from a 2"LED quality sapphire boule using Kyma's K-Slice super-abrasive diamond wire technology in a commercial multi-wire saw ...
Tags: Kyma Technologies Inc., K-Slice diamond wire technology
Kyma Technologies Inc of Raleigh,NC,USA,which provides crystalline gallium nitride(GaN),aluminium nitride(AlN)and aluminium gallium nitride(AlGaN)materials and related products and services,says that it has demonstrated a 10-inch ...
Tags: 10"AlN-on-sapphire template, GaN, PVDNC, GaN LED
11 May 2012 Record transconductance of 1105mS/mm for GaN/InAlN MIS-HFET University of California Santa Barbara(UCSB)has produced gate-first self-aligned metal-insulator-semiconductor heterostructure field-effect ...
Tags: GaN/InAlN, MIS-HFET, UCSB, semiconductor material