In booth 2712 (Hall A) at SEMICON Korea 2016 in Seoul (27-29 January), Advanced Energy Industries Inc of Fort Collins, CO, USA is highlighting its power and control technologies. Among its process power, high-voltage power and thermal ...
The imec research center in Belgium has integrated high-mobility indium gallium arsenide (InGaAs) channels into three-dimensional (3D) vertical NAND charge-trap flash memory structures. The research was reported at the International ...
Université Grenoble Alpes in France and Applied Materials in the USA have been developing techniques to grow gallium arsenide (GaAs) on silicon substrates with a small offcut angle [Y. Bogumilowicz et al, Appl. Phys. Lett., vol107, ...
Tags: GaAs, Quasi-Nominal Silicon, MOVPE
AlGaN/GaN and InAlN/GaN structures combine high electron mobility and high critical electric field strength and are excellent platforms for the production of next-generation RF and power electronics devices such as high-electron-mobility ...
Tags: LayTec, Metrology MOCVD, AlGaN/GaN HEMTs
Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...
Tags: GaN-on-silicon LEDs, Plessey MOCVD
Researchers based in USA have been studying performance improvements in aluminium gallium nitride (AlGaN) ultraviolet (UV) avalanche photodiodes (APDs) gained from using free-standing gallium nitride substrates instead of gallium nitride on ...
Tags: AlGaN, Ultraviolet photodetectors, HVPE
Researchers in the USA have reduced current leakage for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) on silicon to the level achieved for devices produced on much more expensive silicon carbide [Bo Song et ...
Tags: AlGaN, transistors, Silicon
Sandia National Laboratories in the USA has reported aluminium gallium nitride (AlGaN) laser structures emitting ~350nm ultraviolet radiation from optical and electrical pumping [Mary H. Crawford et al, Appl. Phys. Express, vol8, p112702, ...
Tags: AlGaN, ultraviolet lasers, LEDs
Veeco Instruments Inc. (Nasdaq:VECO) announced today that it has shipped the 50th TurboDisc® EPIK™700 GaN Metal Organic Chemical Vapor Deposition (MOCVD) System reactor since its introduction ten months ago. After its launch in ...
Tags: Veeco, MOCVD system, reactor
Two new LED market surveys reveal the growing importance of Chinese suppliers to the world market and the significant growth forecast for LED multifaceted reflector lamps. Firstly, China’s significant investment in its LED ...
Tags: LED industry, MR Lamp, worldwide market
Last week Samsung became the latest big-hitter to change its strategy in the LED lighting sector, with the Korean technology conglomerate making a significant retreat. Having identified the emerging application as a key growth area just ...
Tags: Samsung, LED Lighting, luminaire markets
For third-quarter 2015, epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has reported revenue of $140.7m, up 51% on $93.3m a year ago although up only 7% on $131.4m last quarter (which was the ...
Tags: LED market, LCD TVs
For third-quarter 2015, deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has reported revenue of €54.6m, up 35% on €40.4m last quarter and up 19.7% on €45.6m a year ago due to increased scheduled ...
Tags: Aixtron, lighting market
Researchers in Japan have claimed record breakdown voltage combined with low on-resistance for vertical gallium nitride (GaN) p-n diodes fabricated on free-standing GaN substrates [Hiroshi Ohta et al, IEEE Electron Device Letters, published ...
Emcore Corp of Alhambra, CA, USA, which provides indium phosphide (InP)-based optical chips, components, subsystems and systems for broadband and specialty fiber-optics markets, has expanded its range of laser diode and avalanche photodiode ...
Tags: optical chips, subsystems