Diodes Incorporated, a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, today introduced the BCR420U and BCR421U. These ...
Tags: Diodes, LED strips, decorative lighting
Power semiconductor device manufacturer Rohm Co Ltd of Kyoto, Japan has developed a 1200V/300A full-SiC (silicon carbide) power module - integrating a SiC-SBD (Schottky barrier diode) and SiC-MOSFET (metal-oxide-semiconductor field-effect ...
Plextek RF Integration of Great Chesterford, near Cambridge, UK, which designs and develops RFICs, MMICs and microwave/millimeter-wave modules, says that on 3 December at 18:00GMT (10:00PT/13:00ET/19:00CET) its CEO Liam Devlin is presenting ...
Tags: Plextek, GaN Transistors, GaN transistor
Firecomms Ltd of Cork, Ireland and Tongxiang, China (which manufactures fiber-optic solutions and optical transceivers for communications networks) has launched a range of 5Mb RedLink fiber optic receivers with an extended temperature ...
Tags: Firecomms, Optical transceivers, IGBT driver
After in June launching what it claimed was the lowest-resistance 650V-blocking-voltage transistor (specifying an Rdson as low as 15mOhm), VisIC Technologies Ltd of Rehovot, Israel, a fabless developer of devices based on gallium nitride ...
Tags: VisIC, transistor, semiconductor
Japan's Panasonic Corp has reported the suppression of current collapse up to 800V for a normally-off gallium nitride (GaN) transistor by embedding a hybrid drain in a gate-injection transistor (HD-GIT) structure [Kenichiro Tanaka et al, ...
Tags: Panasonic, GaN transistor, AlGaN
A Kent State University professor in the College of Arts and Sciences has received a grant from the Binational Science Foundation to continue his development of a combined LED and organic transistor that could be used in flexible displays. ...
Tags: Flexible Displays, OLEDs
Research reported in Applied Physics Express (APEX) by Tohru Oka and colleagues at the Research and Development Headquarters for TOYODA GOSEI Co., Ltd in Japan describe the development of ‘vertically orientated’ GaN-based ...
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has launched its Half-Bridge Evaluation Board, which demonstrates ...
Tags: GaN Transistor Circuit, power switching semiconductors
Rensselaer Polytechnic Institute (RPI) in Troy, NY, USA says that Michael Shur (its Patricia W. and C. Sheldon Roberts Professor of Solid State Electronics) is to receive an Achievement award from the UK's Institution of Engineering and ...
Tags: DUV LED Research, transistor
In 2007 Sony grabbed the world's attention with its XEL-1 TV, offering pitch-black blacks and superb motion resolution from a wafer-thin, low power consumption panel. Despite its modest 11-inch size, the milestone product put organic light ...
Tags: OLED products, OLED display, Sony, Samsung
Infineon Technologies AG introduced its first devices in a family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors at this year's European Microwave Week. As part of Infineon’s industry-leading GaN portfoliothe ...
Wafer foundry houses in China have stepped up efforts to develop Fully Depleted Silicon-on-Insulator (FD-SOI), or also called Ultra-Thin Body (UTB), processes for wafer production, compared to the Fin Field-Effect Transistor (FinFET) ...
Tags: Insulator, Semiconductor, high density chips
ACCO Semiconductor Inc of Sunnyvale, CA, USA, a fabless provider of RF front-end component manufactured using standard high-volume bulk CMOS processes, has announced mass production of the AC26120, a CMOS multi-mode multi-band power ...
Tags: ACCO, Semiconductor, smartphones
Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced two plastic-packaged ...
Tags: Wolfspeed, high-electron-mobility transistors, GaN HEMT devices