Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), is exhibiting at the MILCOM 2015 ...
Tags: Wolfspeed, GaN-on-SiC, RF Foundry Services
Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced two plastic-packaged ...
Tags: Wolfspeed, high-electron-mobility transistors, GaN HEMT devices
Researchers in Japan have claimed record breakdown voltage combined with low on-resistance for vertical gallium nitride (GaN) p-n diodes fabricated on free-standing GaN substrates [Hiroshi Ohta et al, IEEE Electron Device Letters, published ...
The Fraunhofer Institute for Organic Electronics, Electron Beam and Plasma Technology FEP will show for the first time organic light emitting diodes (OLEDs) on graphene at Plastic Electronics 2015 (6th − 8th of October ...
Tags: OLED, sgraphene, The Fraunhofer Institute, transparent electrode
Jules Verne said in Around the World in 80 Days: “Anything one man can imagine, other men can make real.” Today, that is truer than ever before. Did you ever think it would be possible to communicate so easily with anyone around ...
Tags: LED streetlights, LED lighting
Taiwan's National Tsing Hua University has been studying ways to improve the performance of p-type gallium nitride (p-GaN) in terms of hole density and contact resistance with nickel/gold [Bo-Sheng Zheng et al, J. Appl. Phys., vol118, ...
Tags: nickel caps, Diodes, Electronics
In booth #240 at European Microwave Week (EuMW) 2015 in Paris, France (6–11 September), Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors ...
Researchers in Belgium have studied forward gate breakdown of enhancement-mode aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors with p-type GaN gate electrodes [Tian-Li Wu et al, IEEE Electron Device ...
Tags: P-Gan Gate, Electronics
Analog Devices Inc (ADI) of Norwood, MA, USA (which provides ICs for analog and digital signal processing applications) has launched a medium-power distributed driver amplifier that operates at 24-35GHz, suitable for civil and defense ...
Tags: Analog Devices, driver amplifier
Osaka University in Japan has developed a plasma pre-treatment for chemical mechanical polishing (CMP) on gallium nitride (GaN) that avoids creating enlarged etch pits [Hui Deng et al, Appl. Phys. Lett., vol107, p051602, 2015]. Surface ...
University of Glasgow and University of Cambridge in the UK have claimed the highest frequency performance to date for gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on low-resistivity (LR) silicon (Si) [A. Eblabla et al, ...
Joachim Piprek, founder & president of NUSOD Institute LLC in the USA, has run simulations that he believes eliminate electron leakage as the primary cause of efficiency droop at high current in blue light-emitting diodes (LEDs) [Appl. ...
Researchers in the USA and Korea have developed a hydrogen high pressure annealing (HPA) process for aluminium oxide/hafnium dioxide (Al2O3/HfO2) gate stacks on indium gallium arsenide (InGaAs) quantum wells [Tae-Woo Kim et al, IEEE ...
Tags: Transistors, capacitors
The global gallium nitride (GaN) industrial devices market is rising at a compound annual growth rate (CAGR) of 15.1% from $481.8m in 2014 to $1315m in 2021, forecasts Transparency Market Research in its report 'GaN Industrial Devices ...
Tags: industrial devices, LED devices
McGill University in Canada has developed light-emitting diodes based on aluminium indium gallium nitride (AlInGaN) nanowires on silicon with spontaneous core-shell structures that inhibit non-radiative surface recombination, improving ...