Hong Kong University of Science and Technology has achieved record maximum drain currents and peak transconductances for enhancement-mode(normally off)metal–oxide–(nitride)semiconductor heterojunction field-effect ...
Taiwan-based researchers have been working to reduce nitride semiconductor high-electron-mobility transistor(HEMT)costs by developing copper interconnect structures compatible with production processes on silicon substrates[Yueh-Chin Lin et ...
Tags: HEMT, Breakdown Voltages, Copper, Gold
Singapore and Hong Kong researchers have developed a gold-free CMOS-compatible process for nitride semiconductor metal–oxide–semiconductor high-electron-mobility transistors(MOS-HEMTs)[Xinke Liu et ...
Tags: Nitride MOS-HEMTs MOCVD, MOS-HEMTs, AlGaN
The German organization for applied research finalizes a strategic collaboration with Scotland’s University of Strathclyde. £89M Technology and Innovation Centre As first reported by optics.org last November, Glasgow ...
Researchers in China have used a combination of surface texturing and vertical-stand mounting to increase light output from nitride semiconductor LEDs by up to 118.5%[T.B.Wei et al,IEEE Electron Device Letters,published online 7 May ...
Tags: LEDs, VLED, GaN, GaN substrate, MOCVD
Researchers in France and Switzerland have used nitride semiconductor quantum cascade(QC)structures to detect short-wavelength infrared light[S.Sakr et al,Appl.Phys.Lett.,vol100,p181103,2012].The team was based variously at University of ...
Tags: Quantum cascade detectors, Short-wavelength IR, QC structures
11 May 2012 Record transconductance of 1105mS/mm for GaN/InAlN MIS-HFET University of California Santa Barbara(UCSB)has produced gate-first self-aligned metal-insulator-semiconductor heterostructure field-effect ...
Tags: GaN/InAlN, MIS-HFET, UCSB, semiconductor material
RWTH Aachen University and Aixtron SE in Germany have developed a new technique to create aluminium oxide insulated gates for nitride semiconductor transistors[Herwig Hahn et al,Semicond.Sci.Technol.,vol27,p062001,2012].The method consists ...
Tags: Plasma oxidation, RWTH Aachen University, Aixtron SE, GaN
Researchers at Ukraine's Lashkaryov Institute of Semiconductor Physics have been studying current crowding and electrical efficiency degradation in vertical indium gallium nitride(InGaN)light-emitting diodes(LEDs)made from material grown on ...
Tags: Vertical InGaN/SiC LEDs, SiC substrates, massive heat sink