Chinese Academy of Sciences’ Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO) has extended its work on double-gated nitride semiconductor high-electron-mobility transistors (DG-HEMTs) [Guohao Yu et al, IEEE Electron Device ...
Tags: Nitride HEMTs, Electrical
The Smart Lighting Engineering Research Center at Rensselaer Polytechnic Institute (RPI) in Troy, NY, USA has demonstrated what is reckoned to be the first monolithically integrated light-emitting diode (LED) and high-electron-mobility ...
Tags: Smart Lighting, GaN Chip
LED chip and component maker SemiLEDs Corp of Hsinchu Science Park, Taiwan, has released two new UV-LED product families, the 10-watt high-power N9 series, and the 0.17 to 0.50-watt mid-power P50N series. Based on SemiLEDs’ patented ...
Tags: SemiLEDs UV-LEDs, Electrical
Skyworks Solutions Inc of Woburn, MA, USA says that an increasing number of its products are enabling telematics and infotainment systems in the automotive market. Telematics is the term used to describe the integrated use of computers and ...
Tags: Skyworks, SOI Telematics
Freescale Semiconductor of Austin, TX, USA, which provides RF power technology for cellular markets, has announced a major initiative focused on demonstrating how its new and existing commercial RF power and microwave RF devices can meet ...
Tags: Freescale, Electrical
IBM has introduced the fifth generation of its semiconductor technology specialized for high-performance communications. The firm’s latest silicon-germanium (SiGe) chip-making process is designed to enable increasing amounts of data ...
Tags: IBM, SiGe Tektronix
Northrop Grumman Corp of Redondo Beach, CA, USA has developed a new gallium nitride (GaN) flange-packaged power amplifier targeting military and commercial Ka-band communication applications. The APN180FP represents the first commercial ...
Tags: Northrop Grumman, GaN HEMTs
RF Micro Devices Inc of Greensboro, NC, USA has launched a broadband, microwave voltage-controlled attenuator. The RFSA2113 provides a complete monolithic solution in a small 3mm x 3mm QFN package and operates over a frequency range of ...
Tags: RFMD Attenuators, Power Control
The world's largest contract semiconductor foundry has brought LEDs to market under its own brand in both a standard 3030 plastic package and in several new COB variations. TSMC (Taiwan Semiconductor Manufacturing Company) SSL (Solid ...
Tags: Packaged LEDs, Lighting
The data from Semiconductor Lighting Industry Association of Guangdong Province shows that the Order Status of LED businesses has performed well since this year, it increased by 20% -30% over the same period of last year and slightly ...
The technology will allow the increasing amounts of data to flow through network. IBM has introduced a fifth generation of semiconductor technology, 9HP silicon-germanium (SiGe) chip-making process for high performance communications. ...
Tags: Electrical, Electronics, Chip
Toshiba America Electronic Components Inc (TAEC) - a subsidiary of Tokyo-based semiconductor maker Toshiba Corp – has expanded its gallium nitride high-electron-mobility transistor (GaN HEMT) lineup with the addition of three new ...
Tags: Toshiba, Satcom Market
Toshiba America Electronic Components Inc (TAEC) - a subsidiary of Tokyo-based semiconductor maker Toshiba Corp - has added a 200W C-band gallium nitride (GaN) high-electron-mobility transistor (HEMT) to its power amplifier product family. ...
Tags: Toshiba, Power Amplifier
Avago Technologies Ltd of San Jose, CA, USA and Singapore, a supplier of analog interface components for wireless, wireline and industrial applications, has announced two RF power amplifiers (PAs), the MGA-43728 and MGA-43828, and a WiFi ...
Tags: Small-Cell Base, Electrical
Peregrine Semiconductor Corp of San Diego, CA, USA, a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-sapphire (SOS), has introduced two new SP5T RF switches for the next generation of high-power LTE ...
Tags: SP5T RF Switches, Military Radios