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LayTec AG
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Integreat Project Yields New Approaches to LED Production
Jul 19, 2018Results have been announced for the research project ‘Integrated High-Volume Production along the LED Value-Added Chain for Large Wafers and Panels’ (InteGreat), which ran between December 2014 and February 2018 supported by the ...
Tags: packaging, LED product
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Laytec Ships in-Situ Metrology System to GaN-on-SiC Customer
Oct 10, 2017In-situ metrology system maker LayTec AG of Berlin, Germany recently shipped a comprehensive EpiCurve TT/Pyro 400 in-situ metrology hybrid system to an industrial customer in North America. The metrology station combines automated in-situ ...
Tags: MOCVD, GaN-on-SiC
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LayTec Adds Nanoscale SPC for Quaternary Films to Epinet 2016 Analysis Software
Jul 27, 2016In its newsletters in April 2016 and June 2015 in-situ metrology system maker LayTec AG of Berlin, Germany reported on x-ray diffraction (XRD)-gauged nk database improvements for InGaAsP (indium gallium arsenide phosphide) and InGaAlAs ...
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Laytec Offers Epitt 280nm Reflectance Channel to Sense Algan Surface Morphology in UV-C LED EPI
Jun 30, 2016Aluminium gallium nitride (AlGaN) buffer layers with high aluminium content are necessary for optimal UV-C LED performance. But their band-edge lies below 300nm, so established 405nm in-situ reflectance is insensitive to the surface ...
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LayTec Receives First Order for Epitt/Vcsel
Jun 30, 2016In-situ metrology system maker LayTec AG of Berlin, Germany says that, following the request of customers and utilizing the modular concept of its new Gen3 in-situ platform, it has customized and expanded the related in-situ metrology ...
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Aixtron Qualifies LayTec Epinet 2016 Software
Jun 30, 2016In-situ metrology system maker LayTec AG of Berlin, Germany says that deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has qualified EpiNet 2016, its latest control and analysis software for EpiTT and EpiCurve TT ...
Tags: LayTec AG, EpiNet 2016
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IQE Equips Complete Fab with Laytec Tools for Mocvd Process Monitoring
Jun 15, 2016In-situ metrology system maker LayTec AG of Berlin, Germany says that epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has purchased a large number of its latest metrology systems for fab-wide metal-organic chemical vapor ...
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LayTec Details Accurate Wafer Temperature Measurement During GaN-on-Si MOCVD For Power Electronics
Mar 9, 2016Temperature measurement during metal-organic chemical vapor deposition (MOCVD) growth of GaN-on-silicon (GaN/Si) devices is challenging, notes in-situ metrology system maker LayTec AG of Berlin, Germany. Theoretically, conventional infrared ...
Tags: MOCVD, GaN devices
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LayTec's Gen3 in-Situ Metrology Tool Offers New Features for UV LED Epitaxy
Feb 19, 2016After unveiling its third generation of in-situ metrology tools last October, in-situ metrology system maker LayTec AG of Berlin, Germany says that the EpiTT Gen3 is now available as the first representative of this Gen3 product class. ...
Tags: UV LED epitaxy, sapphire
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Mitsubishi Uses Laytec in-Situ Monitoring to Grow Crack-Free GaN-on-Si HEMTs
Dec 3, 2015The main challenge of growing gallium nitride (GaN)-based high-electron-mobility transistors (HEMTs) on silicon substrates is the lattice mismatch between GaN and AlGaN that causes a high tensile stress and often leads to cracks. Now, by ...
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Laytec Expands Epinet Library's High-Temperature Nk Database and Real-Time Analysis for GaN/Sic-4h HEMTs
Dec 3, 2015AlGaN/GaN and InAlN/GaN structures combine high electron mobility and high critical electric field strength and are excellent platforms for the production of next-generation RF and power electronics devices such as high-electron-mobility ...
Tags: LayTec, Metrology MOCVD, AlGaN/GaN HEMTs
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Osram Opto Coordinating German Government Launched LED Manufacturing R&D Project
Apr 9, 2015A fully optimized production concept for LED components and light modules in which all the process steps are coordinated with one another could give rise to completely new types of LED and also reduce their manufacturing costs. The declared ...
Tags: LED components, crystal growth, Lights
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Germany's Integreat Project Aims to Improve High-Efficiency LEDs Production
Apr 3, 2015Supported by the German Ministry for Education and Research (BMBF) as part of the 'Photonic Process Chains' initiative, the project 'Integrated High-Volume Production along the LED Value-Added Chain for Large Wafers and Panels' (InteGreat) ...
Tags: Osram HB-LEDs, BMBF, Electronics
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LayTec AG Can Be Improved by Using a-Plane III-Nitrides
Mar 5, 2014In-situ metrology system maker LayTec AG of Berlin, Germany notes that it is known that some properties of gallium nitride (GaN)-based light-emitting quantum wells (QW) can be improved by using a-plane III-nitrides. However, during ...
Tags: LayTec Metrology, AIN Interlayers
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MOVPE Growth of AlGaAs on GaAs Is Limited by Lattice Mismatch
Dec 20, 2013It is known that metal-organic vapor phase epitaxy (MOVPE) growth of AlGaAs on GaAs is limited by lattice mismatch at room temperature and not at growth temperature (A. Maassdorf et.al., J. Cryst. Growth 370 (2013) 150-153), notes in-situ ...
Tags: Laser Structures, Electronics