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Misfit
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Monolithic Electrically Injected Microdisk Lasers on Silicon
Aug 1, 2017Researchers in Russia claim “the first demonstration of an injection quantum well microdisk laser fabricated of III-V materials monolithically grown on silicon (001) substrate” [N. V. Kryzhanovskaya et al, Optics Express, vol. ...
Tags: silicon photonics, Lasers
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Baldor Specialty Foods Diverts Organic Waste From Landfills
Jan 10, 2017New York-based produce processor and distributor Baldor Specialty Foods has diverted all organic waste generated in its fresh-cut plant from landfill, as part of its SparCs food-waste initiative. SparCs is a waste-prevention strategy ...
Tags: Organic Waste, Specialty Foods
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The Misfit Phase Is The Company's First Hybrid Smartwatch
Oct 25, 2016Taking a page out of its rivals' playbooks, Misfit has announced the Phase Hybrid Smartwatch – a classic timepiece hiding the company's fitness tracking functionality below the surface. In the world of fitness wearables, it seems ...
Tags: rivals'playbooks, Misfit, Smartwatch
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Integrating InGaAs Well in Ridges on 300mm Silicon
Sep 29, 2016Imec and Ghent University in Belgium have used aspect ratio trapping (ART) techniques to produce indium gallium arsenide (InGaAs) multiple quantum wells (MQWs) on 300mm-diameter silicon in a ridge format that could be used in future laser ...
Tags: InGaAs MQWs, InGaAs Laser diodes, Imec and Ghent University
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Indium Gallium Arsenide Laser Diode on Exact Germanium-on-Silicon Substrate
Sep 9, 2016Researchers in Russia have developed an indium gallium arsenide (InGaAs) quantum well laser diode on (001) germanium-on-silicon 'virtual substrate' without offcut angle [V. Ya. Aleshkin et al, Appl. Phys. Lett., vol109, p061111, 2016]. ...
Tags: InGaAs, Laser diodes, III-Vs-on-Si
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Reducing Misfit Dislocations in Green Semi-Polar Light-Emitting Diodes
Aug 26, 2016University of California Santa Barbara (UCSB) in the USA has used limited-area epitaxy (LAE) on semi-polar gallium nitride (GaN) substrates to reduce misfit dislocation (MD) densities in multiple quantum well (MQW) green light-emitting ...
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ORNL-Led Group Grows Aligned Monolayers of Lattice-Mismatched Semiconductors
Apr 21, 2016Led by the Department of Energy's Oak Ridge National Laboratory (ORNL), a group of researchers has synthesized a stack of atomically thin monolayers of two lattice-mismatched semiconductors (Xufan Li et al, 'Two-dimensional GaSe/MoSe2 ...
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Gallium Nitride Nano-Sized LEDs
Apr 11, 2016In 2014, the Nobel Prize in physics was awarded for the discovery of the gallium-nitride-based blue-light LED and its use for new, efficient LED-based white lamps. The development efforts in this field, however, do not stop there. The ...
Tags: LED, Nobel Prize
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UCLA Developed Gallium Antimonide Thermophotovoltaic Cells
Apr 7, 2015University of California Los Angeles (UCLA) has developed gallium antimonide (GaSb) thermophotovoltaic (TPV) cells on gallium arsenide (GaAs) substrates [Bor-Chau Juang et al, Appl. Phys. Lett., vol106, p111101, 2015]. The use of GaAs ...
Tags: TPV devices, lattice mismatch, Electronics
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Ces with an Entire Array of New Technology and Devices That Sparkle
Jan 13, 2015This year, for the first time at CES, gadget makers got it right, with an entire array of new technology and devices that sparkle, shine, and made me seriously swoon. Here's what caught my eye: Mirror, Mirror on the Wall Panasonic's ...
Tags: CES 2015, Beauty Equipment
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InGaN LEDs with Thicker Active Regions Enabled by on The Semi-Polar (30-3-1) Plane
Nov 13, 2014University of California Santa Barbara (UCSB) and Mitsubishi Chemical Corp have reported indium gallium nitride (InGaN) light-emitting diodes (LEDs) with thicker active regions enabled by growing the crystal on the semi-polar (30-3-1) plane ...
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LLO Technique for Removing GaN Aims to Improve Light Extraction Efficiency
Sep 9, 2014Meijo and Nagoya universities in Japan have developed a laser lift-off (LLO) technique for removing gallium nitride (GaN) substrates from ultraviolet (UV) light-emitting diodes (LEDs) to improve light extraction efficiency [Daisuke Iida et ...
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Fangliang Gao and Guoqiang Li Plan to Grow High-Quality Indium Gallium Arsenide
Apr 3, 2014Fangliang Gao and Guoqiang Li of South China University of Technology have developed a technique to grow high-quality indium gallium arsenide (InGaAs) on gallium arsenide substrates using an ultrathin amorphous buffer [Appl. Phys. Lett., ...
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Big and Established Hardware Manufacturers Jumped Into The Fitness Tracker Fray
Jan 13, 2014This is the CES of the wearable gadget. And, while there are all sorts of technologies you can wear-after all, earbuds are wearable-the big explosion is in fitness trackers. The first wave of these small gadgets, worn on a wrist, clipped on ...
Tags: CES 2014 Trends, CES 2014, Fitness Trackers, Smart Watches
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UCSB Plans to Improve The Performance of Lasers Diodes
Nov 27, 2013University of California Santa Barbara (UCSB) has been using limited area epitaxy (LAE) to improve the performance of lasers diodes (LDs) grown on free-standing semipolar (20-21) gallium nitride (GaN) substrates [Matthew T. Hardy et al, J. ...