Plasma etch articles & resources on Made-in-China.com

Oxford Instruments Supplies China's First Mass-Production VCSELs Fab

Aug 27, 2018

UK-based plasma etch and deposition processing system maker Oxford Instruments Plasma Technology (OIPT) says that Sino-semic - the first all-Chinese developer and manufacturer of vertical-cavity surface-emitting lasers (VCSELs) for face ...

Tags: plasma processing systems, LEDs

SPTS's Omega Plasma Etch System Chosen by Hiwafer for New 6'' GaN-on-SiC High-Power RF Device Production Line

Nov 28, 2017

SPTS Technologies Ltd of Newport, Wales, UK (an Orbotech company that manufactures etch, PVD and CVD wafer processing solutions for the MEMS, advanced packaging, LED, high-speed RF on GaAs, and power management device markets) has won an ...

Tags: SPTS, GaN-on-SiC, LED

Monolithic Electrically Injected Microdisk Lasers on Silicon

Aug 1, 2017

Researchers in Russia claim “the first demonstration of an injection quantum well microdisk laser fabricated of III-V materials monolithically grown on silicon (001) substrate” [N. V. Kryzhanovskaya et al, Optics Express, vol. ...

Tags: silicon photonics, Lasers

CORIAL Announces Hard Materials Drie Processes for MEMS Manufacturing

Oct 12, 2016

Plasma etch and deposition equipment maker CORIAL S.A.S. of Bernin, France has announced the availability of hard materials deep etch processes using a new generation of 200mm ICP-RIE (inductively coupled plasma reactive-ion etch) ...

Tags: CORIAL S.A.S., Plasma etch, hard materials deep etch processes

Oxford Instruments Develops SiC Via Etch for GaN-on-SiC RF Device Manufacture

Oct 12, 2016

UK-based process equipment maker Oxford Instruments has announced the development and launch of a silicon carbide (SiC) via plasma etch process using its PlasmaPro100 Polaris etch system. SiC is becoming an increasingly important ...

Tags: Oxford Instruments, SiC, GaN RF devices

Reducing Misfit Dislocations in Green Semi-Polar Light-Emitting Diodes

Aug 26, 2016

University of California Santa Barbara (UCSB) in the USA has used limited-area epitaxy (LAE) on semi-polar gallium nitride (GaN) substrates to reduce misfit dislocation (MD) densities in multiple quantum well (MQW) green light-emitting ...

Tags: LAE, GaN, LEDs

Subwavelength Micro-Disk Lasers on Exact (001) Silicon Substrate

Jun 23, 2016

Researchers in Hong Kong and USA have been working on producing optically pumped micro-disk lasers on exact (001) silicon [Yating Wan et al, Appl. Phys. Lett., vol108, p221101, 2016]. The team from Hong Kong University of Science and ...

Tags: Subwavelength, CMOS-compatible platform

Fully Vertical Gallium Nitride P-I-N Diode Grown on Silicon Substrate

Apr 29, 2016

Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...

Tags: GaN devices, Silicon Substrate

Samco Launches Ald System for Gate Oxides in Wide-Bandgap Power Devices

Dec 21, 2015

SAMCO Inc of Kyoto, Japan, a supplier of plasma etch, chemical vapour deposition (CVD) and surface treatment systems to compound semiconductors device makers, has launched an atomic layer deposition (ALD) system focusing on gate oxide ...

Tags: Samco MOCVD GaN, AL-1 ALD system, Electronics

Advanced Vacuum Apex SLR System Expanding Device Processing at NASA's JPL

Dec 3, 2015

Plasma process equipment maker Plasma-Therm LLC of St Petersburg, FL, USA says that a new Apex SLR ICP (inductively coupled plasma) etch system from its Advanced Vacuum division in Lomma, Sweden (which supplies vacuum solutions including ...

Tags: Apex SLR ICP

Researchers in USA Develops Vertical Schottky and Pn GaN Diodes on Silicon

Jul 27, 2015

Researchers in the USA have developed vertical Schottky and pn gallium nitride (GaN) diodes on silicon with performance comparable to devices grown on much more expensive substrates [Yuhao Zhang et al, IEEE Transactions On Electron Devices, ...

Tags: electronics, semiconductor

Researchers in China and Hong Kong Have Claimed The Highest Output Power Density

Jul 13, 2015

Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors ...

Tags: GaN MIS-HEMTs, PECVD ALD MOCVD

SPTS Has Sold Its Thermal Products Business to SPP Technologies Co Ltd

Jul 7, 2015

SPTS Technologies Ltd of Newport, Wales, UK (which is owned by Israeli firm Orbotech) has sold its Thermal Products business to SPP Technologies Co Ltd (SPT), a subsidiary of Sumitomo Precision Products Co Ltd (SPP) that specializes in the ...

Tags: SPTS Thermal processing systems, SPP technologies, semiconductor

265nm-Wavelength LEDs Is More Powerful and Efficient

Apr 22, 2015

Researchers based in Japan claim the highest output power and external quantum efficiency (EQE) so far for deep ultraviolet (DUV) sub-270nm-wavelength light-emitting diodes (LEDs) during DC operation [Shin-ichiro Inoue et al, Appl. Phys. ...

Tags: DUV LEDs, DUV devices

MOCVD Demonstration Capability on The New GaN-on-Si System From VPE of Branchburg

Jan 16, 2015

SAMCO Inc of Kyoto, Japan, a supplier of plasma etch, chemical vapour deposition (CVD) and surface treatment systems to compound semiconductors device makers, has announced metal-organic chemical vapour deposition (MOCVD) demonstration ...

Tags: metal-organic chemical, GaN-550 MOCVD system, Electrical

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