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molecular beam epitaxy
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Silanna to Set up Advanced Manufacturing Research Facility at University of Adelaide
Aug 23, 2018Silanna Group of Brisbane, Australia (which was founded in 2006 to develop and productize advanced technologies) is partnering with the University of Adelaide to establish an advanced manufacturing research facility on its campus, ...
Tags: Silanna's products, semiconductor
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Riber Grows Revenue 87% Year-on-Year for First Nine Months of 2017
Oct 25, 2017For third-quarter 2017, Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has reported revenue of €2.8m, up 145% on €1.1m a year ago. Revenue ...
Tags: Riber, molecular beam epitaxy
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Riber's 80% Year-on-Year Revenue Growth for First-Half 2017 Drives Return to Profitability
Sep 29, 2017Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has confirmed revenue of €12.5m for first-half 2017, up 80% on €7m in first-half 2016 (and ...
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Veeco's Q2 Revenue up 21% Year-on-Year Organically
Aug 9, 2017For second-quarter 2017, epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has reported revenue of $115.1m, up 22% on $94.4m last quarter and up 53% on $75.3m a year ago. However, this includes ...
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Monolithic Electrically Injected Microdisk Lasers on Silicon
Aug 1, 2017Researchers in Russia claim “the first demonstration of an injection quantum well microdisk laser fabricated of III-V materials monolithically grown on silicon (001) substrate” [N. V. Kryzhanovskaya et al, Optics Express, vol. ...
Tags: silicon photonics, Lasers
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Riber Reports First-Half 2017 Revenue up 80% Year-on-Year
Jul 26, 2017For first-half 2017, Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has reported revenue of €12.5m, up 80% on €7m in first-half 2016, ...
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Riber's Revenue Booms in Q1/2017, Driven by Cells Sources for PV and Screen Application
Apr 27, 2017For first-quarter 2017, Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has reported revenue of €9.2m, up dramatically from €1.4m a year ago. ...
Tags: MBE systems, effusion cells
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Reducing Subthreshold Swing of Gallium Arsenide Transistors
Sep 28, 2016Korea Institute of Science and Technology (KIST) claims a record low subthreshold swing of 68mV/decade for a gallium arsenide (GaAs) field-effect transistor (FET) [SangHyeon Kim et al, IEEE Electron Device Letters, published online 24 ...
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Riber Slashes Losses in First-Half 2016, Driven by 29% Growth in MBE System Revenue
Sep 28, 2016For first-half 2016, Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has confirmed revenue of €6.9m, up 21% on first-half 2015's €5.7m. ...
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Reducing Laser Diode Optical Leakage with Indium Gallium Nitride Waveguides
Sep 23, 2016Institute of High Pressure Physics (IHPP) and TopGaN Ltd, both of Poland, have been jointly developing indium gallium nitride (InGaN) waveguide structures for use in blue laser diodes (LDs) [Grzegorz Muziol et al, Appl. Phys. Express, vol9, ...
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Indium Gallium Arsenide Laser Diode on Exact Germanium-on-Silicon Substrate
Sep 9, 2016Researchers in Russia have developed an indium gallium arsenide (InGaAs) quantum well laser diode on (001) germanium-on-silicon 'virtual substrate' without offcut angle [V. Ya. Aleshkin et al, Appl. Phys. Lett., vol109, p061111, 2016]. ...
Tags: InGaAs, Laser diodes, III-Vs-on-Si
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Israel's Technion Purchases Veeco's 25th GENxplor R & D MBE System
Sep 6, 2016Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has received an order for its 25th GENxplor R&D molecular beam epitaxy (MBE) system. Introduced in August 2013, the GENxplor system is said to be ...
Tags: Veeco MBE, GENxplor system
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Continuous-Wave Room-Temperature Indium Arsenide Quantum Cascade Laser
Aug 30, 2016University of Montpellier in France claims the first continuous-wave (cw) operation at room temperature of a 15μm indium arsenide (InAs) quantum cascade laser (QCL) [Alexei N. Baranov et al, Optics Express, vol. 24, p18799, 2016]. "To ...
Tags: University of Montpellier, InAs, MBE
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Gallium Arsenide Phosphide Solar Cells on Silicon with Record 12% Efficiency
Aug 26, 2016Yale University and University of Illinois Urbana in the USA have improved the efficiency of gallium arsenide phosphide (GaAsP) solar cells on silicon (Si) by reducing threading dislocation densities (TDDs) [Kevin Nay Yaung et al, Appl. ...
Tags: GaAsP solar cells, GaAsP, MBE, MOCVD
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UIUC Uses MOCVD Growth of Cubic GaN on Silicon to Boost Efficiency and Brightness of Green LEDs
Aug 3, 2016Researchers at the University of Illinois at Urbana Champaign (UIUC) say that they have developed a new method for making brighter and more efficient green LEDs (R. Liu and C. Bayram, 'Maximizing cubic phase gallium nitride surface coverage ...
Tags: Green LEDs, MOCVD
