For third-quarter 2017, POET Technologies Inc of Toronto, Canada and San Jose, CA, USA —a designer and manufacturer of optoelectronic devices, including light sources, passive waveguides and photonic integrated circuits (PIC) for the ...
For second-quarter 2017, POET Technologies Inc of San Jose, CA, USA — which has developed the proprietary planar optoelectronic technology (POET) platform for monolithic fabrication of integrated III-V-based electronic and optical ...
Tags: POET Technologies, sensors
Pasternack Inc of Irvine, CA, USA (which makes both passive and active RF, microwave and millimeter-wave products) has launched a new line of E- and W-band PIN diode waveguide switches. The single-pole single-throw (SPST) and double-pole ...
Tags: Pasternack, Switches
Researchers in Russia claim “the first demonstration of an injection quantum well microdisk laser fabricated of III-V materials monolithically grown on silicon (001) substrate” [N. V. Kryzhanovskaya et al, Optics Express, vol. ...
Tags: silicon photonics, Lasers
III-V optoelectronic foundry Compound Semiconductor Technologies Global Ltd (CST Global) of Hamilton International Technology Park, Blantyre, near Glasgow, Scotland, UK says that, at the III International Conference on Applications in ...
Keysight Technologies Inc of Santa Rosa, CA, USA (which provides electronic measurement instruments, systems and related software used in the design, development, manufacture, installation, deployment and operation of electronic equipment) ...
Tags: Keysight, Virginia Diodes, Chalmers
Arralis Ltd of Limerick, Ireland, which designs and manufactures RF, microwave and millimetre-wave devices, modules and antennas up to and beyond 110GHz (the W-band) for aerospace and security market, has added new monolithic integrated ...
Oracle Networking Group in the USA believes that it has made the first demonstration of an integrated surface-normal coupled laser array on a silicon-on-insulator photonics platform [Shiyun Lin et al, Optics Express, vol24, p21455, 2016]. ...
Imec and Ghent University in Belgium have used aspect ratio trapping (ART) techniques to produce indium gallium arsenide (InGaAs) multiple quantum wells (MQWs) on 300mm-diameter silicon in a ridge format that could be used in future laser ...
Tags: InGaAs MQWs, InGaAs Laser diodes, Imec and Ghent University
Institute of High Pressure Physics (IHPP) and TopGaN Ltd, both of Poland, have been jointly developing indium gallium nitride (InGaN) waveguide structures for use in blue laser diodes (LDs) [Grzegorz Muziol et al, Appl. Phys. Express, vol9, ...
Privately held integrated optical communications component and sub-system developer ColorChip Ltd of Yokneam, Israel has begun production of 100G QSFP28 10km transceivers. The range is based on the emerging 4WDM multi-source agreement ...
Kaiam Corp of Newark, CA, USA - a private company founded in 2009 commercializing hybrid photonic integrated circuit (PIC) technology for pluggable optical transceivers in data-centers - has launched the new platform LightScale2. The ...
Tags: Kaiam, platform LightScale2, PIC technology
University of Montpellier in France claims the first continuous-wave (cw) operation at room temperature of a 15μm indium arsenide (InAs) quantum cascade laser (QCL) [Alexei N. Baranov et al, Optics Express, vol. 24, p18799, 2016]. "To ...
Tags: University of Montpellier, InAs, MBE
Ghent University/IMEC in Belgium and X-Celeprint in Ireland/USA claim "the first III-V optoelectronic components transfer printed on and coupled to a silicon photonic integrated circuit" [Andreas De Groote et al, Optics Express, vol24, ...
ICT-STREAMS, a part of the European Union Horizon 2020 program, is a new three-year project launched on 1 February (followed by a kick-off meeting at the Aristotle University of Thessaloniki, Greece on 24-25 February) with the goal of ...
Tags: III-Vs-on-Si, silicon photonics