APEI and GaN Systems have developed a 1MHz gallium nitride power dc-dc boost converter delivering 5kW at 98.5% efficiency.
GaN power transistors are lightning fast, have low on-resistance, and are been proposed for converters working between 600 and 1,200V.
"Testing demonstrated turn-on and turn-off transitions of 8.25 and 3.72ns, respectively," said the firm.
Source:
http://www.electronicsweekly.com/Articles/2013/03/20/55804/gan-converts-5kw-at-98.5-efficiency.htm
