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Dec 5, 2017
ROHM of Kyoto, Japan is to provide full-SiC (silicon carbide) power modules to the VENTURI Formula E team during season 4 (2017–2018) of FIA Formula E (the world’s first formula racing championship for all-electric vehicles), which will ...
Nov 13, 2017
For third-fiscal 2017, epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has reported revenue of $131.9m, up 15% on $115.1m last quarter and up 54% on $85.5m a year ago, marking the first full ...
Aug 3, 2017
Arizona State University (ASU) in the USA claims the first demonstration of 1kV-class aluminium nitride (AlN) Schottky barrier diodes (SBDs) [Houqiang Fu et al, IEEE Electron Device Letters, 5 July 2017]. AlN has a wide bandgap of ...
Dec 4, 2014
NTT Basic Research Laboratories in Japan has used a hexagonal boron nitride (h-BN) layer to release and transfer gallium nitride (GaN) high-electron-mobility transistors (HEMTs) from sapphire substrate to thermally conducting copper, ...
Aug 1, 2017
Researchers in Russia claim “the first demonstration of an injection quantum well microdisk laser fabricated of III-V materials monolithically grown on silicon (001) substrate” [N. V. Kryzhanovskaya et al, Optics Express, vol. 25, p16754, ...
Mar 18, 2017
The "Made in China 2025" (MIC 2025) plan, published by the China State Council in May of 2015, has demonstrated the country's ambition to enhance its fabless IC design industry in terms of market share and technology capability. Major ...