21 June 2012 Sumitomo launches next-gen GaN HEMT for L and S-band satellite applications
In booth 2003 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),wireless and optical communications component and module provider Sumitomo Electric Device Innovations USA Inc of San Jose,CA,USA(SEDU,a subsidiary of Japan's Sumitomo Electric Industries Ltd,or SEI)is featuring its enhanced line of gallium nitride(GaN)high-electron-mobility transistor(HEMTs)for satellite applications.
The firm says that its GaN HEMT devices for L/S-band applications offer high efficiency,ease of matching,greater consistency and broad bandwidth,with 50V operation and higher gain than competing power transistor solutions,it is claimed.Sumitomo says that its space-level Quality Assurance Program assures the highest reliability and consistent performance for space-grade-level products.The product family is in production and shipping to multiple customers.Sumitomo is also developing a 100W unmatched device for the UHF band.
Sumitomo Electric claims to have been first to market with L/S-band discrete HEMT devices with 100W of output power for space use.The GaN devices cover frequencies up to 2.5GHz with output power ranging from 4W to 100W.The firm claims to be the market leader for GaN devices for space applications.
