Hittite Microwave Corp of Chelmsford,MA,USA(which designs and supplies analog,digital and mixed-signal RF,microwave and millimeter-wave ICs,modules and subsystems as well as instrumentation)has launched two new power amplifiers suited to microwave radio,electronic warfare(EW),electronic counter measures(ECM)and radar applications to 28GHz.Also released is a unique wideband low-noise amplifier(LNA)that operates from 300MHz to 20GHz and is suited to wideband multi-chip-module(MCM)and subsystem applications.
The HMC994LP5E is a GaAs MMIC pHEMT distributed power amplifier that operates between DC and 28GHz.The amplifier provides 13dB of gain,+29dBm of saturated output power,and 23%power-added efficiency(PAE)from a+10V supply.With up to+38dBm output IP3,the device suits high-linearity applications in military and space as well as point-to-point and point-to-multi-point radios.
The HMC998LP5E is a GaAs MMIC pHEMT distributed power amplifier that operates between 100MHz and 20GHz.The amplifier provides 11dB of gain,+41dBm output IP3,and+31dBm of output power at 1dB gain compression while requiring only 500mA from a+15V supply.
Both the HMC994LP5E and the HMC998LP5E exhibit very flat gain from 4 to 16GHz and from 3 to 17GHz respectively,suiting EW,ECM,radar and test equipment applications.Both are supplied in leadless QFN 5mm x 5mm surface-mount packages and feature I/Os that are internally matched to 50 Ohms.
The HMC1049 is a GaAs MMIC pHEMT low-noise amplifier die that operates between 300MHz and 20GHz and employs a novel topology that maintains a low noise figure of 1.7dB at low frequencies.The amplifier also delivers 16dB of small-signal gain and output IP3 of+27dBm,while requiring only 70mA from a+7V supply.The P1dB output power of+16dBm enables the LNA to function as an LO driver for balanced,I/Q or image reject mixers.The device is internally matched to 50 Ohms for ease of integration into MCMs.
Die samples,SMT product samples and evaluation PC boards for all SMT-packaged products are available from stock.
