Millitech Inc of Northampton,MA,USA,a Smiths Interconnect business that designs and manufactures millimeter-wave components,assemblies and fully integrated antenna positioning systems for satellite communications,radar,passive imaging,space and remote sensing applications,says it is now offering gallium nitride(GaN)-based E-band and W-band solid-state power amplifiers able to achieve small size and high power.
The firm claims that the power amplifiers represent a leap in output power at E-band and W-band frequencies,with up to 3W of output power and up to 20%power-added efficiency(PAE)available in standard models.The new AMP models offer catered performance over specific allocated bands or wideband power covering frequencies of 75-102GHz.
The E-band(WR-12)models cover the commercially allocated 71-76GHz and 81-86GHz bands.The W-band models cover 75-102GHz.
Each amplifier has internal bias circuitry that generates gate control voltages,provides proper voltage sequencing,and incorporates reverse voltage protection from a single positive external bias.
Single device models are available with nearly 1W of saturated output power.Standard models also include 2-way and 4-way solid-state power amplifiers(SSPAs)with up to 3W of saturated output power.Higher powers are available.
