MicroWave Technology Inc (MwT) of Fremont, CA, USA, the RF division of IXYS Corp that makes microwave devices, MMICs, hybrid modules and connecterized amplifiers for wireless communication infrastructure, military/aerospace, industrial and medical applications, has launched an AlGaAs/InGaAs pHEMT-based monolithic microwave integrated circuit (MMIC) ultra-broadband driver amplifier product up to 50GHz. The product is targeted at applications including fiber-optics communications, microwave/mm-wave communications systems, microwave/mm-wave testing equipment, and military applications.
The MMA-005022 is an ultra-broadband travelling-wave amplifier MMIC with medium output power and high gain over a full range of nearly DC 30kHz to 50GHz. It offers a typical +22dBm saturated power and +20dBm output power at a 1dB gain compression point at 30GHz. The MMIC chip typically has 16dB gain across the band with +/-1dB gain flatness. The typical input/out return loss for the chip is 15dB. The DC bias is 200mA drain current with 7V drain voltage.
"The excellent performance of the MMA-005022 ultra-broadband MMIC amplifier up to mm-wave frequency range, together with its high reliability and competitive cost, make this part an excellent choice for wide range applications including modulator driver for fiber-optics communication, wireless communication infrastructure, microwave and mm-wave frequency testing equipment, military/EW, and high-rel/space etc," reckons MwT's general manager Dr Greg Zhou.
The MMA-005022 is fully matched for both input and output terminals for easy cascade and is also available in the low-cost R4 (4mm x 4mm) surface-mount package. The mean time before failure (MTBF) is over 100 years at 85°C ambient temperature. An evaluation board for the packaged version of the device is also available.
